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    Text: KSMD4N25 / KSMU4N25 N-Channel MOSFET 250 V, 3 A, 1.75Ω TO-251 TO-252 Features • 3 A, 250 V, RDS on = 1.75 Ω (Max) @VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 4.3 nC) • Low Crss (Typ. 4.8 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is


    Original     		KSMD4N25 KSMU4N25 O-251 O-252 PDF