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LRC Leshan Radio Co Ltd LN2302LT1G Trans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R (Alt: LN2302LT1G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	LN2302LT1G		42,000	12 Weeks	30,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

LN2302LT1G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LN2302LT1G		Leshan Radio Company	20V N-Channel Enhancement-Mode MOSFET		Original	PDF

LN2302LT1G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM	Original	PDF	LN2302LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. LN2302LT1G ▼ Capable of 2.5V gate drive ▼ Small package outline 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage	Original	PDF	LN2302LT1G 236AB)
LN2302 Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G S-LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 Features 2 High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM	Original	PDF	LN2302LT1G S-LN2302LT1G 236AB) AEC-Q101 OT-23 LN2302
LN2302LT1G Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. LN2302LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ Features 3 1 2 High Density Cell Design For Ultra Low On-Resistance SOT– 23 (TO–236AB) Improved Shoot-Through FOM	Original	PDF	LN2302LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LN2302LT1G
sot-23 single diode mark PD Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23 Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM	Original	PDF	LN2302LT1G 236AB) 3000/Tape LN2302LT3G 000/Tape 195mm 150mm 3000PCS/Reel sot-23 single diode mark PD LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	PDF	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
KF6N60 Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION	Original	PDF	USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05