LX5512E Search Results

LX5512E Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LX5512E		Microsemi	InGaP HBT 2.4 - 2.5 GHz Power Amplifier		Original	PDF
LX5512ECLQ		Microsemi	Diode, 500W Transient Voltage Suppressor		Original	PDF
LX5512ECLQT		Microsemi	Diode, 500W Transient Voltage Suppressor		Original	PDF
LX5512ELQ		Microsemi	InGaP HBT 2.4-2.5 GHz power amplifier.		Original	PDF
LX5512E-LQ		Microsemi	InGaP HBT 2.4 - 2.5 GHz Power Amplifier		Original	PDF
LX5512E-LQT		Microsemi	Amplifier, InGaP HBT 2.4-2.5GHz Power Amplifier, Tape And Reel		Original	PDF
LX5512ELQ-TR		Microsemi	InGaP HBT 2.4-2.5 GHz power amplifier.		Original	PDF

LX5512E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LX5512E Abstract: LX5512E-LQ LX5512E-LQT Text: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm LX5512E-LQ LX5512E-LQT	PDF
Untitled Abstract: No abstract text available Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g	PDF
diode dc components m7 footprint Abstract: ofdm amplifier LX5512E LX5512E-LQ LX5512E-LQT 2.4 ghZ rf transistor OM5040 Text: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm diode dc components m7 footprint ofdm amplifier LX5512E-LQ LX5512E-LQT 2.4 ghZ rf transistor OM5040	PDF
LX5512E Abstract: LX5512E-LQ LX5512E-LQT Text: LX5512E I N T E G R A T E D InGaP HBT 2.4-2.5GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For 18dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 2 %, and consumes 120 mA total DC	Original	LX5512E 18dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 18dBm LX5512E-LQ LX5512E-LQT	PDF
Untitled Abstract: No abstract text available Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 45GHz 19dBm 130mA 19dBm 64QAM 54Mbps LX5512E	PDF
LX5512E Abstract: LX5512ELQ LX5512ELQ-TR bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm LX5512ELQ LX5512ELQ-TR bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter	PDF
bipolar transistor 2.4 ghz s-parameter Abstract: bipolar transistor 2.45 ghz s-parameter LX5512E LX5512ELQ LX5512ELQ-TR dc m7 footprint 2.45 Ghz power amplifier 30 db Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter LX5512ELQ LX5512ELQ-TR dc m7 footprint 2.45 Ghz power amplifier 30 db	PDF
Untitled Abstract: No abstract text available Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 45GHz 19dBm 130mA 19dBm 64QAM 54Mbps LX5512E	PDF
diode dc components m7 footprint Abstract: ofdm amplifier LX5512E LX5512E-LQ LX5512E-LQT Text: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm diode dc components m7 footprint ofdm amplifier LX5512E-LQ LX5512E-LQT	PDF
Untitled Abstract: No abstract text available Text: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin	Original	LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm	PDF
PW130 Abstract: ADVANCED ANALOGIC TECHNOLOGY max3353 GlobTek PM Qualcomm ACPM-7813 ACPM-7833 ACPM-7891 ADL5552 "power sourcing equipment" Text: P O W E R F O R P O R TA B L E E L E C T R O N I C S Wireless and Broadband Driving the Portable Power Market by Linnea C. Brush B ROADBAND AND WIRELESS Semiconductor advances are mobile handsets. Agilent Technologies are two technologies currently enabling many of these new technolo www.agilent.com has introduced a	Original		PDF