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    Untitled

    Abstract: No abstract text available
    Text: LZP50N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area BVDSS=60V , Application RDS ON =0.022Ω, • DC-DC Converters


    Original     		PDF LZP50N06P

    N-CHANNEL 60V 50a

    Abstract: POWER MOSFET Rise Time LZP50N06P
    Text: LZP50N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area BVDSS=60V , Application RDS ON =0.022Ω, • DC-DC Converters


    Original     		PDF LZP50N06P above25 to175 N-CHANNEL 60V 50a POWER MOSFET Rise Time LZP50N06P