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    AAZZ

    Abstract: m23c100
    Text: / = T SGS-THOMSON * J Æ > RfflD g^(Q iLi(gU^ iD(gi M23C1000 CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION


    OCR Scan     		PDF M23C1000 100ns M23C1000 100ns VA00665 PDIP28 AAZZ m23c100

    Untitled

    Abstract: No abstract text available
    Text: ¿ = 7 SG S -ltfO M SO N M23C1000 CMOS 1 Megabit 128K x 8 ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION ■ CHIP ENABLE ACTIVE LEVEL MASK PRO­


    OCR Scan     		PDF M23C1000 100ns M23C1000 PDIP28

    23c1000

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON ^7# M [R!©IIL[I STr[KS©[MDËS M 23C 1000 1024K (128K x 8 CMOS ROM • VERY FAST ACCESS TIME : 100 ns (Chip select or address access time) ■ LOW POWER "CM O S” CONSUMPTION : _ Operating current 40 mA Max. _ Stand by current 20 |iA Max.


    OCR Scan     		PDF 1024K PDIP-28 23C1000 M23C1000B1 PDIP28 28-PIN

    EPROM

    Abstract: M87C512 m27c256 UV EPROM ET2716
    Text: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 2K x 8 M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) UV EPROM . UV EPROM .


    OCR Scan     		PDF M/ET2716 M2732A M2764A M27128A M27256 M27512 TS27C64A M27HC641 M27C256B M87C257 EPROM M87C512 m27c256 UV EPROM ET2716

    256x16 eprom

    Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1


    OCR Scan     		PDF ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B

    mask rom

    Abstract: No abstract text available
    Text: M23C1000/1010 G/J CMOS MASK ROM (128Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072x 8 bit organization • Fast access tim e: 120ns(max). • Supply voltaga: singie+5V •Current consumption Operating: 30 mA(max.) Standby: 50/<A(max.) • Fully static operation


    OCR Scan     		PDF KM23C1000/1010 128Kx8) 120ns 28-pin, 32-pin, 600mil, 525mil, mask rom

    sgs thomson

    Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
    Text: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns


    OCR Scan     		PDF M27512 M27256 M27128A M2764A M2732A M2716 64x16 128x8 128x16 sgs thomson FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM