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    AMD AM28F010-120JC

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    Bristol Electronics AM28F010-120JC 307
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    Intel Corporation AM28F010-200/BXA

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    Bristol Electronics AM28F010-200/BXA 283
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    AMD AM28F010-95JC

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    Bristol Electronics AM28F010-95JC 163
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    AMD AM28F010-120FC

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    Bristol Electronics AM28F010-120FC 150
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    AMD AM28F010-150

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    Bristol Electronics AM28F010-150 98
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    M28F010 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28F010 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    M28F010-12 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    M28F010-15 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    M28F010-25 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    M28F010-90 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF

    M28F010 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    28F010

    Abstract: M28F010 M28F010-12 M28F010-90 M80C186
    Text: M28F010 1024K 128K x 8 CMOS FLASH MEMORY Y Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption


    Original
    M28F010 1024K M28F010 ER-20 ER-24 28F010 M28F010-12 M28F010-90 M80C186 PDF

    IC1431

    Abstract: i28F010
    Text: INTEL CORP In te l UP/PRPHLS HOE Q • Hfl2bl75 QOfilS4b 3 ■ y I P K I lL O G ilD K l« M28F010 T4<*-Y lszr? 1024K (128K x 8) CMOS FLASH MEMORY ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chip-Erase


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    Hfl2bl75 M28F010 1024K M28F010 00aiSb3 402bl7S IC1431 i28F010 PDF

    TCS 4199

    Abstract: M80C186
    Text: tF ^ m L O G M M V in te i M28F010 1024K 128K x 8 CMOS FLASH MEMORY ETOX-III Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10,000 Program/Erase Cycles Minimum


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    M28F010 1024K M28F010 TCS 4199 M80C186 PDF

    Untitled

    Abstract: No abstract text available
    Text: in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 5 Second Typical ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Typical Chip-Program ■ Single High Voltage for Writing and Erasing


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    1024K M28F010 ER-20, ER-24, 28F010 RR-60, AP-316, PDF

    271111

    Abstract: No abstract text available
    Text: in te i P ftiO M flN A H V M28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m in g Algorithm


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    M28F010 1024K M28F010 271111 PDF

    Untitled

    Abstract: No abstract text available
    Text: m u M /m 7 in t e i M28F010 1024K 128K x 8 CMOS FLASH MEMORY ETOX-III Flash-Memory Technology — EPROM-Compatible Process Base — Hlgh-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10,000 Program/Erase Cycles Minimum


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    M28F010 1024K 1024-Kbit 32-pin M28F010 ER-20, PDF

    271111

    Abstract: No abstract text available
    Text: ß ff iiy ß M M V in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY ETOX-III Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts Flash Electrical Chip-Erase


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    1024K M28F010 MIL-STD-883: M28F010 Mfl2bl75 4AEL17S ER-20, 271111 PDF

    28F016SA

    Abstract: application notes 297372 AP-610 Intel AP-701 28F008SA
    Text: intei AVAILABLE APPLICATION NOTES AND ADDITIONAL DOCUMENTATION AVAILABLE APPLICATION NOTES To obtain a copy of the following application notes, call the Intel literature center at 1-800-548-4725 or contact your local Intel/Distributor field sales office and request the appropriate order number or application note number.


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    AP-701, AP-441, M28F010 AP-444, AP-359, 28F008SA AP-360, AP-375, AP-377, 28F016SA application notes 297372 AP-610 Intel AP-701 PDF

    intel PLD

    Abstract: intel 1150 Socket PIN diagram
    Text: SflE » INTEL CORP MEMORY/PLD/ • 4 ö 2 b l 7 b ODfiOTbl Û1E « I T L 2 ß lftg y M O ß S M V in t e i ¡M28F010 1024K (128K x 8 CMOS FLASH MEMORY ETOXtm-II Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience


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    M28F010 1024K M28F010 intel PLD intel 1150 Socket PIN diagram PDF