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    M5361 Price and Stock

    Alpha Wire M5361-SL005

    CABLE 3CON 20AWG SLATE SHLD 100'
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    DigiKey M5361-SL005 8 1
    • 1 $232.16
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    Onlinecomponents.com M5361-SL005
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    Master Electronics M5361-SL005
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    Eaton Bussmann 170M5361

    FUSE SQUARE 550A 700VAC RECT
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    DigiKey 170M5361 Bulk 1
    • 1 $778.59
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    Newark 170M5361 Bulk 1
    • 1 $790.63
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    RS 170M5361 Bulk 10 Weeks 1
    • 1 $744.64
    • 10 $707.4
    • 100 $670.17
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    Sager 170M5361 1
    • 1 $554.83
    • 10 $520.15
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    Alpha Wire M5361-SL001

    CABLE 3COND 20AWG SHLD
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    DigiKey M5361-SL001 1,000
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    Onlinecomponents.com M5361-SL001
    • 1 $1611.02
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    Master Electronics M5361-SL001
    • 1 $1611.02
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    Viking Technology TAR03DTBM5361

    RES SMD 5.36K OHM 1/6W 0603
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    DigiKey TAR03DTBM5361 Reel 5,000
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    Viking Technology TAR03CTCM5361

    RES SMD 5.36K OHM 1/6W 0603
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    DigiKey TAR03CTCM5361 Reel 5,000
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    Find more M5361 price and stock on Findchips.com

    M5361 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M53611601BE0-C50 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53611601BE0-C60 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53611601BJ0-C50 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53611601BJ0-C60 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53611601CE0-C50 Samsung Electronics Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53611601CE0-C60 Samsung Electronics Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53611601CJ0-C60 Samsung Electronics Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53613201BE0-C50 Samsung Electronics 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53613201BE0-C60 Samsung Electronics 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53613201BJ0-C50 Samsung Electronics 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53613201CE0-C50 Samsung Electronics Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53613201CE0-C60 Samsung Electronics Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53613201CJ0-C50 Samsung Electronics Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M53613201CJ0-C60 Samsung Electronics Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    M5361 SL001 Alpha Wire Cables, Wires - Multiple Conductor Cables - CABLE 3COND 20AWG SHLD 1000" Original PDF
    M5361-SL001 Alpha Wire Multiple Conductor Cables, Cables, Wires, CBL 3COND 20AWG SLT 1000' Original PDF
    M5361-SL002 Alpha Wire Multiple Conductor Cables, Cables, Wires, CBL 3COND 20AWG SLT 500' Original PDF
    M5361 SL002 Alpha Wire Cables, Wires - Multiple Conductor Cables - CABLE 3COND 20AWG SHLD 500" Original PDF
    M5361-SL005 Alpha Wire Multiple Conductor Cables, Cables, Wires, CBL 3COND 20AWG SLT 100' Original PDF
    M5361 SL005 Alpha Wire Cables, Wires - Multiple Conductor Cables - CABLE 3COND 20AWG SHLD 100" Original PDF

    M5361 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53613201BE0/BJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53613201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53613201BE0/BJ0-C 32Mx36 16Mx4 16Mx1 M53613201BE0/BJ0-C 16Mx1, PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53611601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53611601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M53611601BE0/BJ0-C 16Mx36 16Mx4 16Mx1 M53611601BE0/BJ0-C 16Mx1, PDF

    Untitled

    Abstract: No abstract text available
    Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M5361 Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 20 (7/28) AWG TC 0.038 b) Insulation 0.016" Wall, Nom. PVC


    Original     		M5361 SL000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53611601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53611601CE0/CJ0-C DRAM MODULE M53611601CE0/CJ0-C


    Original     		M53611601CE0/CJ0-C 16Mx36 16Mx4 16Mx1 M53611601CE0/CJ0 16Mx1, M53611601CE0/CJ0-C PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53613201CE0/CJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. M53613201CE0/CJ0-C DRAM MODULE M53613201CE0/CJ0-C


    Original     		M53613201CE0/CJ0-C 32Mx36 16Mx4 16Mx1 M53613201CE0/CJ0-C 16Mx1, PDF

    coaxial cable awm 1354

    Abstract: AWM 2498 M39024/11
    Text: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan


    Original     		High13/2024 coaxial cable awm 1354 AWM 2498 M39024/11 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5361000B1 is a 1M bits x 36 Dynamic RAM M5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung


    OCR Scan     		M5361000B1 KMM5361000B1 KMM5361000B1 KMM5361000B1-6 KMM5361000B1-7 KMM5361000B1-8 110ns 130ns 150ns 20-pin PDF

    0015142

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 M5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns M5361000B2-7 70ns 20ns


    OCR Scan     		KMM5361000B2/B2G M5361000B2-6 110ns KMM5361000B2-7 130ns M5361000B2-8 150ns M5361000B2 5361000B2 20-pin 0015142 PDF

    pico electronics transformers h5460

    Abstract: M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300
    Text: P IC O ’S Ultra-Miniature PULSE Transformers .n i!* # » no "/« MAX ” OIA MSERIES rB fO _ . 2 5 0 t 010 025 Plug-In 3 5 MAX DIA 14.9 MAX OlA) 16 .3 5 t r* 7/ M MAX 5.55 M AX)£ 035* (0 91 00 i.* 5 .2 5,4 «6.351 i '/ j iV * (38.1 + 6 .3 5 ) , I.so i t s


    OCR Scan     		MIL-PRF-21038 100KHZ-17MHZ KHz-10 E-5183 E-5184 E-5185 E-5186 E-5187 E-5188 E-5189 pico electronics transformers h5460 M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300 PDF

    KMM5361000/A

    Abstract: No abstract text available
    Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 M5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung M5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung M5361000A1 consist of eight CMOS 1M x4 bit


    OCR Scan     		KMM5361OOOA1/A1G KMM5361000A1 20-pin 72-pin KMM5361000A1-7 130ns M5361OOOA1 150ns KMM5361000/A PDF

    km44c1003cj

    Abstract: No abstract text available
    Text: DRAM MODULE M5361203AW/AWG M5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung M5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung M5361203AW consists of two CMOS


    OCR Scan     		KMM5361203AW/AWG KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KMM5361233AW km44c1003cj PDF

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 M5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung M5361000B is a 1M bits x 36 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		Tb4142 KMM5361000B/BG KMM5361000B 20-pin 72-pin 110ns KMM5361000B-7 130ns PDF

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" PDF

    KM44C1000

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14


    OCR Scan     		KM41C4000 KM41C1000L KM41C4001 M5361000A/AG/A1/A1G KMM5322000AV/AVG KMM5362000A/AG/A1/A1G KMM5401000A/AG KMM5402000A/AG KM44C1000 PDF

    km44c16104ak

    Abstract: 44c16104
    Text: DRAM MODULE M53616004AK/AKG M53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs


    OCR Scan     		KMM53616004AK/AKG KMM53616004AK/AKG 16Mx4 16Mx1, 3616004A 16Mx36bits M53616004AK cycles/64ms M53616004AKG km44c16104ak 44c16104 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M5361205C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE M5361205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5361205CW /CWG to M5361205C2W /C2W G caused by PCB revision .


    OCR Scan     		KMM5361205C2W/C2WG 1Mx36 1MX16 KMM5361205CW KMM5361205C2W KMM5361205C2W/C2WG PDF

    TIC 1160

    Abstract: No abstract text available
    Text: M5361000A1/A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5361000A1 is a 1M bits x 36 Dynamic RAM high d e nsity m em ory m odule. The Sam sung M5361000A1 co n sist o f eig h t CMOS 1 M x 4 bit


    OCR Scan     		KMM5361000A1/A1G 5361000A1 M5361OOOA1 KMM5361000A1-10 100ns 130ns 150ns 180ns KMM5361000A1 TIC 1160 PDF

    KMM364C12

    Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7Sb4142 0014517 721 M5361000B1/B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRAC tcAC tra M5361000B1-6 60ns 15ns 110ns M5361000B1-7


    OCR Scan     		7Sb4142 KMM5361000B1/B1G 110ns KMM5361000B1-7 130ns KMM5361000B1-8 KMM5361000B1 20-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: M536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung K M M 5 3 6 1 0 0 0 A is a 1M b its X 3 6 Dynamic RAM high density m em ory module. The Samsung K M M 5 3 6 1 0 0 0 A con sist o f eight C M OS 1 M X 4 bit


    OCR Scan     		KMM536100QA/AG/A1 20-pin 72-pin 361000A- M5361000A/A1: KMM5361000 111il 111111h PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E M5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung M5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung


    OCR Scan     		KMM5361OOOBV/BVG 1Mx36 KMM5361000BV bitsx36 20-pin 72-pin KMM5361000BV-7 130ns 5361OOOBV-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE M5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5361203CW /CWG to M5361203C2W /C2W G caused by PCB revision .


    OCR Scan     		KMM5361203C2W/C2WG 1Mx36 1MX16 KMM5361203CW KMM5361203C2W KMM5361203C2W/C2WG 5361203C2W PDF

    M5330

    Abstract: A5161
    Text: PICO ’S Ultra-Miniature PU LSE Transformers SPECIFICATIONS e ML-TO31O30: • OPERATING TEMPERATURE: All unit* manufactured 1o MIL T 21036 -S5°C to +130°C FEATURES e EXTREM E RESISTANCE TO THERMAL SHOCK e ULTRA MINIATURE SIZE # BUILT TO MIL T-21036 e TERMINALS:


    OCR Scan     		ML-TO31O30: T-21036 MIL-STD-202 IL-STD-202, M-5362 M-5364 M5330 A5161 PDF

    KMM5361003

    Abstract: KMM5361003-6
    Text: SAI1SUN6 ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 001525b 3S3 « S M G K M5361003/G DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5361003/G is a 1M b its x 3 6 Dynam ic RAM high density m em ory module. The Sam sung


    OCR Scan     		001525b KMM5361003/G 1Mx36 KMM5361003-6 KMM5361003-7 KMM5361003-8 130ns 150ns KMM5361003/G KMM5361003 PDF