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    M5364080 Search Results

    M5364080 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M53640800CB0-C50 Samsung Electronics 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53640800CB0-C60 Samsung Electronics 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53640800CW0-C50 Samsung Electronics 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53640800CW0-C60 Samsung Electronics 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53640805BT0-C50 Samsung Electronics 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640805BT0-C60 Samsung Electronics 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640805BY0-C50 Samsung Electronics 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640805BY0-C60 Samsung Electronics 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE


    Original     		PDF M53640805CY0/CT0-C 8Mx36 4Mx16 M53640805CY0/CT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53640805BY0/BT0-C 8Mx36 4Mx16 M53640805BY0/BT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D


    Original     		PDF M53640800DW0/DB0 M53640810DW0/DB0 M53640800DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D


    Original     		PDF M53640800DW0/DB0 M53640810DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin

    DQ9-DQ12

    Abstract: No abstract text available
    Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C


    Original     		PDF M53640800CW0/CB0 M53640810CW0/CB0 M53640810CW0/CB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin DQ9-DQ12