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    M58WR016QB Search Results

    M58WR016QB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M58WR016QB Numonyx 16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories Original PDF

    M58WR016QB Datasheets Context Search

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    M58WR032QB

    Abstract: CR10 M58WR016QB M58WR016QT M58WR032QT VFBGA56 8812h
    Text: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR016QT M58WR016QB M58WR032QT M58WR032QB 66MHz M58WR032QB CR10 M58WR016QB VFBGA56 8812h

    M58WR032QB

    Abstract: M58WR032QT VFBGA56 CR10 M58WR016QB M58WR016QT
    Text: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR016QT M58WR016QB M58WR032QT M58WR032QB 66MHz M58WR032QB VFBGA56 CR10 M58WR016QB