Untitled
Abstract: No abstract text available
Text: Switching Diodes MA4X160 MA160 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 Unit 40 V VRM 40 V Forward current Single IF(AV) 100 mA (Average) Series Repetitive peak Single
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MA4X160
MA160)
SC-61
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) VR Repetitive peak reverse voltage Forward current
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2002/95/EC)
MA4X160A
MA160A)
SC-61
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marking M1D
Abstract: MA160 MA4X160
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 M Di ain sc te on na tin nc ue e/ d (0.95) (0.95)
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2002/95/EC)
MA4X160
MA160)
marking M1D
MA160
MA4X160
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MA160A
Abstract: MA4X160A
Text: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05 0.5 0.95 Unit VR 80 V VRRM 80 V 2 0.4 − 0.05 0.8 + 0.1
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MA4X160A
MA160A)
MA160A
MA4X160A
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MA160
Abstract: MA4X160 m1d 95
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 Rating Unit VR 40 V VRM 40
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2002/95/EC)
MA4X160
MA160)
SC-61
MA160
MA4X160
m1d 95
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Untitled
Abstract: No abstract text available
Text: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Unit 80 V VRRM 80 V IF(AV) 100 mA IFRM 225 IFSM 500 Double Double Double 1: Cathode 1 2: Anode 2 3: Cathode 2
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MA4X160A
MA160A)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Forward current (Average) Single Repetitive peak
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2002/95/EC)
MA4X160A
MA160A)
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MA160A
Abstract: MA4X160A
Text: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Forward current (Average) Single Repetitive peak forward current Single Unit 80 V VRRM 80 V IF(AV)
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MA4X160A
MA160A)
SC-61
MA160A
MA4X160A
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MA160A
Abstract: MA4X160A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d (0.95) (0.95) 0.40+0.10
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2002/95/EC)
MA4X160A
MA160A)
SC-61
MA160A
MA4X160A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Forward current (Average) Single Repetitive peak
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2002/95/EC)
MA4X160A
MA160A)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 Rating Unit VR 40 V VRM 40
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MA4X160
MA160)
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MA4X160AG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160AG Silicon epitaxial planar type For switching circuits • Package • Two isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping
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MA4X160AG
MA4X160AG
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MA160A
Abstract: MA4X160A
Text: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit : mm 2.90+0.02 –0.05 For switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10 –0.05 0.4±0.2 • Two isolated elements contained in one package, allowing highdensity mounting
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MA4X160A
MA160A)
MA160A
MA4X160A
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MA160
Abstract: MA4X160
Text: Switching Diodes MA4X160 MA160 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 0.4±0.2 (0.65) 0.60+0.10 –0.05 Rating Unit VR 40 V Maximum peak reverse voltage VRM 40
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MA4X160
MA160)
SC-61
MA160
MA4X160
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MA4X160A
Abstract: No abstract text available
Text: Switching Diodes MA4X160A Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05 Unit VR 80 V VRRM 80 V 0.95 0.5 0.4 − 0.05 2 + 0.1 0.16 − 0.06
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MA4X160A
MA4X160A
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panasonic m1d
Abstract: marking M1D MA4X1600G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X1600G Silicon epitaxial planar type For high-speed switching circuits • Package ■ Features • Code Mini4-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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MA4X1600G
panasonic m1d
marking M1D
MA4X1600G
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MA4X160AG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160AG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuits • Package • Two isolated elements contained in one package, allowing highdensity mounting
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MA4X160AG
MA4X160AG
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panasonic m1d
Abstract: MA4X1600G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X1600G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching circuits • Package ■ Features • Code Mini4-G3 • Pin Name ue pl d in
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MA4X1600G
panasonic m1d
MA4X1600G
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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