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Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5114 MARCH 1995 DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,
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Abstract: a8415
Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with
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Abstract: 17-18L
Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with
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Abstract: DS3591-4
Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with
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Text: S i GEC P L E S S E Y SE MI CO N D U C T O R S DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3|im technology. The design uses a 6 transistor cell and has full static operation with
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Text: G E C P L E S S E Y «Asm S h M I < O \ I I ] ( ) K s Radiation Hard 1024x4 Bit Static RAM S10306FD S Issue 1.4 O cto ber 1990 Features A3 A4 Ai Ab A# AU • 3}im CMOS-SOS technology • Latch-up free • Fast access time 90ns typical • Total dose 10s rad (Si)
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