MA3X721
Abstract: MA3X740 MA721 MA740
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
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MA3X721
Abstract: MA3X740 MA721 MA740
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc
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2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
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MA3X721
Abstract: MA3X740 MA721 MA740
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
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IR 50
Abstract: JIS C 1102 diodes ir MARKING 103 MA3X721 MA3X740 MA721 MA740
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
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MA3X740
MA740)
MA3X721
MA721)
IR 50
JIS C 1102
diodes ir
MARKING 103
MA3X721
MA3X740
MA721
MA740
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
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MA3X740
MA740)
MA3X721
MA721)
150nteed
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MA740
Abstract: Marking m3c
Text: 2SK1606 Schottky Barrier Diodes SBD MA740 Silicon epitaxial planer type 2.8 –0.3 Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current Single Double Single Double Single Double VRRM Storage temperature
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2SK1606
MA740
200mA
100mA
MA740
Marking m3c
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
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MA3X740
MA740)
MA3X721
MA721)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
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MA3X740
MA740)
MA3X721
MA721)
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MA3X721
Abstract: MA3X740 MA721 MA740
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
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MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
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ETC 529 DIODE
Abstract: MA3X740 MA740 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Repetitive peak reverse voltage Average forward current Single Peak forward current Single VR 30 V VRRM 30 V IF(AV) 200 mA Double*1 Single Non-repetitive peak forward surge current*2 Double*1
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MA3X740
MA740)
O-236
SC-59
ETC 529 DIODE
MA3X740
MA740
panasonic ma diodes sc-59 Marking
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MA740C
Abstract: uA740 mA740h UA740 8 pin MA740 MA740HC A740HC UA740C Fairchild uA740 A741
Text: MA740 FET INPUT OPERATIONAL AMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION — The jiA740 Is a high performance monolithic FET Input Operational Amplifier constructed using the Fairchild Planar* epitaxial process. It is intended for a wide range of
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MA740
uA740
jiA740
applic--55
/uA740
MA740C
mA740h
UA740 8 pin
MA740
MA740HC
A740HC
UA740C
Fairchild uA740
A741
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MA740C
Abstract: A740C A740C-T MA740C-T uA740C MA740 voltage follower schematic
Text: MA740C-T DESCRIPTION FEATURES The nA740C is a special purpose high per formance operational am plifier utilizing a FET input stage for high input impedance and low input current. • • • • • • • The device features internal compensation, standard pinout, wide differential and com
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MA740C-T
uA740C
A740C-T
juA740C-T
100mV
100pf,
mA740C
MA740C
A740C
A740C-T
MA740C-T
MA740
voltage follower schematic
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A740C
Abstract: 740hc U740 740C PA740 UA740C/D fet input 740hc 740M JIA740 MA740
Text: MA740 FET Input Operational Amplifier DlNnnEPiiOlL FEATURES • H ig h in p u t im p e d a n c e . . . 1 M f i • N o fre q u en c y co m pensation required • S h o rt-c irc u it p ro te c tio n GENERAL DESCRIPTION • O f fs e t v o lta g e n u ll c a p a b ilit y
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ma702
Abstract: uA740 UA715 MOTOROLA 5051 A715 MA776 MC1539 A740 JUA709 JUA748
Text: M AN U FAC TU RER Fairchild Semiconductor Intersil P A R T N U M B ER H A R R IS E Q U IV A L E N T N O T ES MA702 HA-2620/2625 C2 /XA709 HA-909/911 B2 ;uA715 HA-2520/2525 B2 juA725 HA-2700/2705 A3 C2 MA727 HA-2900/2905 MA734 HA-2111/2311 C2 MA740 HA-2060/2065
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MA702
JUA709
uA715
juA725
MA727
MA734
juA741
MA747
JUA748
JUA772
uA740
MOTOROLA 5051
A715
MA776
MC1539
A740
JUA709
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ma702
Abstract: UA715 H12-200 A740 JUA709 JUA748 JUA772 MA727 MA747 MA776
Text: MANUFACTURER Fairchild Semiconductor Intersil PART NUMBER HARRIS EQUIVALENT NOTES MA702 HA-2620/2625 C2 /XA709 HA-909/911 B2 ;uA715 HA-2520/2525 B2 juA725 HA-2700/2705 A3 C2 MA727 HA-2900/2905 MA734 HA-2111/2311 C2 MA740 HA-2060/2065 B2 juA741 HA-909/911,2600/2605
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MA702
JUA709
uA715
juA725
MA727
MA734
juA741
MA747
JUA748
JUA772
H12-200
A740
JUA709
MA776
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lm709
Abstract: LH740A LM101A LM741 MA740
Text: LH740A LH740A FET Input Operational Amplifier 22 Absolute Maximum Ratings General Description Supply Vottage ±22V Maximum Power Dissipation SOOmW Differential Input Voltage ± 5V Input Voltage ±15V Short Circuit Duration Continuous Operating Temperature Range
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LH740A
LM741,
LM709.
LM101A,
MA740
100pA
RETS740AX,
-55aC
150BC
lm709
LM101A
LM741
MA740
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MA740C
Abstract: A7-40Y mA740h uA740C UA740 A740 ma740hc la740 fairchild ua741 a740y
Text: ¿iA740 ^ FET IN PU T OP ER A TIO N A L AMPLIFIER F A IR C H IL D LIN EA R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — T h e ^ A 7 4 0 is a h ig h p e r fo rm a n c e m o n o lith ic F E T I n p u t O p e ra tio n a l A m p lif ie r c o n s tru c te d u sing th e F a ir c h ild P la n a r* e p ita x ia l p rocess. I t is in te n d e d f o r a w id e ra n ge o f
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A740y
mA740
/iA740
FR60UENCY
MA740C
A7-40Y
mA740h
uA740C
UA740
A740
ma740hc
la740
fairchild ua741
a740y
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kt 207
Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
81MIN
26MAX
fiJ44
kt 207
ma741
MA723
420C
610C
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ad quad op amp
Abstract: 715C MA740 ma747e mA776C
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA19 MA715C L-OA20 14 □ COMP 2B COMP 1A p 2 13 3 12 4 11 14 1 n c I □ 2 COMP IB I CASCODEI □ - 'N p | OUTPUT - IN [= NC □ e NC □ 7 nc -.Np 5 + |N 11 p v + >>L □ NC I FREQ COMP □ 3 □ OUT □ 6 v -C
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L-OA19
L-OA20
mA741C/E
L-OA21
MA747C/E
L-OA22
MA301A,
mA748,
mA777C
L-OA23
ad quad op amp
715C
MA740
ma747e
mA776C
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MA301A
Abstract: A307 A348 mA748c OA21 715C MA709C mA324 MA3401 MA748
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA1 /iA302, mA310, mA714C/E/L L-OA2 MA307 L-OA3 mA308, mA308A NC vMetal Can and Mini-Dip Connection Shown L-OA4 MÄ702C L-OA5 mA709C IN FREQ COMP L-OA6 MÄ725C/E n cK F T TAB V- Metal Can and Mini-Dip Connection Shown
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mA302,
mA310,
mA714C/E/L
mA307
MA709C
mA308,
mA308A
725C/E
mA318,
MAF355,
MA301A
A307
A348
mA748c
OA21
715C
MA709C
mA324
MA3401
MA748
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