MASW6010G
Abstract: No abstract text available
Text: MASW6010G GaAs SPDT Switch DC - 6.0 GHz Rev. V6 Features Pad Layout • Low Insertion Loss: 0.5 dB Typical @ 4 GHz • Fast Switching Speed: 4 ns Typical • Ultra Low DC Power Consumption Description M/A-COM Technology’s MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small
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GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Abstract: MASW6010G
Text: GaAs SPDT Switch DC - 6.0 GHz MASW6010G V4 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption Integral Static Protection RFC GND GND RF1 RF2 A B Description M/A-COM’s MASW6010G
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GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
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Abstract: No abstract text available
Text: GaAs SPDT Switch, DC - 6.0 GHz MASW6010G V3 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption Integral Static Protection RFC GND GND RF1 RF2 A B Description M/A-COM’s MASW6010G
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Abstract: No abstract text available
Text: GaAs SPDT Switch DC - 6.0 GHz MASW6010G V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption Integral Static Protection Description M/A-COM’s MASW6010G is an SPDT GaAs
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MASW6010
Abstract: MASW6010G
Text: GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C* Frequency Range DC - 6000
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MASW6010G
Abstract: No abstract text available
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents GaAs SPDT Switch DC - 6.0 GHz MASW6010G V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption
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GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Abstract: MASW6010G
Text: MASW6010G V GaAs SPDT Switch DC - 6.0 GHz Rev. V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption Integral Static Protection Description M/A-COM’s MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It
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Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
Abstract: SW-210 mmic A MASW6010G MASW6020G SW-200
Text: Techniques to Achieve High Isolation with GaAs MMIC Switch Chips Mounting Techniques 1. Mount the base of the chip directly on the ground plane i.e. the metal floor of the package and use short connections from the ground pads of the MMIC to the ground plane.
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Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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PH1819-60
Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies
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SPDT FETs
Abstract: DR65-0001 SWD-119 small signal GaAs FET SW SPDT AT-220 MASW4030G MASW6010G SW-313 SWD-109
Text: An ASIC Driver for GaAs FET Control Components This application note covers driver selection and circuit design for FET switches and attenuators, including non-linear performance as Vopt is varied By Christopher Weigand M/A-COM, Inc. he use of a plastic packaged ASIC driver
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SWD-109)
SWD-119
DR65-0001)
SPDT FETs
DR65-0001
small signal GaAs FET
SW SPDT
AT-220
MASW4030G
MASW6010G
SW-313
SWD-109
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MAAM-008863
Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America
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40W267
MAAM-008863
MAMU-009156
transistor MY52
200W MOSFET POWER AMP
transistor MY51
GPS Antenna AT65
MA4ST350
MADR-007690-DR0002
a74 sot-89
SM4T mixer
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Untitled
Abstract: No abstract text available
Text: « liM P A M V W iy GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C * * * Frequency Range
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Abstract: No abstract text available
Text: M an A M P com pany GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ L ow I n s e r t io n Loss, 0.5 d B T y p ic a l @ 4 G H z Fast S w itc h in g S p e e d , 4 n s T yp ical Ultra Low DC P o w e r C o n s u m p t i o n Integ ra l Static P ro te c tio n
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