MBN800E33D Search Results

MBN800E33D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MBN800E33D		Hitachi Semiconductor	TRANS IGBT MODULE N-CH 3300V 800A		Original	PDF

MBN800E33D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MBN800E33D Abstract: No abstract text available Text: Spec.No.IGBT-SP-03012 R1 IGBT MODULE MBN800E33D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.	Original	IGBT-SP-03012 MBN800E33D 000cycles) MBN800E33D	PDF
MBN800E33D Abstract: MBN800 Text: IGBT MODULE Spec.No.IGBT-SP-03012 R4 P1 MBN800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-03012 MBN800E33D 000cycles) MBN800E33D MBN800	PDF
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.	Original	IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles)	PDF
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-03012 MBN800E33D 000cycles)	PDF
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-03012 MBN800E33D 000cycles)	PDF
MDM800E33D Abstract: No abstract text available Text: DUAL DIODE MODULE Spec.No.SR2-SP-03002R8 MDM800E33D FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Symbol Repetitive Peak Reverse Voltage	Original	SR2-SP-03002R8 MDM800E33D MDM800E33D	PDF
mbm150gr12 Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics	Original	MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt	PDF
Untitled Abstract: No abstract text available Text: DUAL DIODE MODULE Spec.No.SR2-SP-03002R8 MDM800E33D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Repetitive Peak Reverse Voltage	Original	SR2-SP-03002R8 MDM800E33D	PDF
C2E1 Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12 Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。】Ｃ：適合Ｓ.Ｃ：適合Ｎ：未対応（但し適用除外項目物質を含有）【ステータス】Ｍ：量産品Ｗ：ＷＳ	Original	MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12	PDF
N2M400 Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)	Original	KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C	PDF