Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fn u n 11 7 ^ n HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package.
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MG150J1ZS50
00A///s
50tis
100//S*
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Untitled
Abstract: No abstract text available
Text: MG150J1ZS50 U nit in mm HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L A PPLICA TIO N S. 2-FAST-ON-TAB »110 • • The Electrodes are Isolated from Case. High Input Impedance • Enhancement-M ode High Speed : tf= 0.30/iS Max. (Iç = 150A)
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MG150J1ZS50
30/iS
15//s
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 5 0 J 1 Z S 5 0 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 -/6 .4 ± 0 .3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One
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MG150J1ZS50
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PDF
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MG150J1ZS50
Abstract: No abstract text available
Text: MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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MG150J1ZS50
2-95A3A
MG150J1ZS50
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG150J1ZS50 TOSHIBA GTR MODULE M G 1 5 0 SILICON N CHANNEL IGBT J 1 ZS 5 0 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-«S5.4±0.3 • • • 2-FAST-OK-TAB #110 The Electrodes are Isolated from Case. High Input Impedance
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MG150J1ZS50
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GT80J101
Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412
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GT8J101
GT8J102
GT8Q101
GT15J101
GT15J102
GT8Q102
MG300J2YS50
MG400J1US51
MG400J2YS50
MG800J1US51
GT80J101
MG75Q2YS40
MG360V1US41
MG100Q2YS42
MG75J6ES50
GT60M301
MG15J6ES40
MG300Q2YS40
MG150Q2YS40
mg100j6es5
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Untitled
Abstract: No abstract text available
Text: MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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MG150J1ZS50
2-95A3A
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igbt toshiba mg
Abstract: MG150J1ZS50
Text: TOSHIBA MG150J1ZS50 MG1 50J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package.
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MG150J1ZS50
150J1ZS50
VGE--10V
igbt toshiba mg
MG150J1ZS50
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG150J1ZS50 TOSHIBA GTR MODULE M G 1 5 SILICON N CHANNEL IGBT 0 J 1 Z S 5 0 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-«S5.4±0.3 • • • 2-FAST-OK-TAB #110 The Electrodes are Isolated from Case. High Input Impedance
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MG150J1ZS50
TjS125â
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PDF
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MG150J1ZS50
Abstract: No abstract text available
Text: MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode
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MG150J1ZS50
2-95A3A
MG150J1ZS50
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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MG40001US41
Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50
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MG400J1US51
MG800J1US51
MG300J1US51
MG40J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG400J2VS50
MG2SJ6ES40
MG40001US41
MG806ES42
MG15J6ES40
MG75J2YS50
MG100Q2YS42
mg300q1us41
MG50Q2YS40
mg150j1
MG100J2YS50
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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