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Mitsubishi Electric MGF0904A01 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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ComSIT USA	MGF0904A01		2,175			1 - 10 - 100 - 1000 - 10000 -	Get Quote
MIT MGF0904A INSTOCK
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Chip 1 Exchange	MGF0904A		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MGF0904A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGF0904A		Mitsubishi	L,S BAND POWER GaAs FET		Original	PDF
MGF0904A		Mitsubishi	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET		Scan	PDF
MGF0904A		Mitsubishi	L, S Band Power GaAs FET		Scan	PDF

MGF0904A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mitsubishi Abstract: MGF0904 MGF0904A mitsubishi electric Band Power GaAs FET Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0904A L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004	Original	PDF	June/2004 MGF0904A mitsubishi MGF0904 MGF0904A mitsubishi electric Band Power GaAs FET
Untitled Abstract: No abstract text available Text: < High-power GaAs FET small signal gain stage > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION	Original	PDF	MGF0904A MGF0904A, 65GHz 15dBm 200mA
MGF0904 Abstract: No abstract text available Text: < High-power GaAs FET small signal gain stage > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3	Original	PDF	MGF0904A MGF0904A, 65GHz 15dBm 200mA MGF0904
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	PDF	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	PDF	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
F0904A Abstract: MGF0904A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0904A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 4 A . GaAs F E T w ith an N-channel s c h o ttk y U n it:m illim e te r s m c h e s l gate, is designed fo r use in U H F band am plifiers.	OCR Scan	PDF	MGF0904A 15dBm 15dBm F0904A MGF0904A
MGF0905A Abstract: No abstract text available Text: A m its u b is h i ELECTRONIC DEVICE GROUP Die_ MGFC0904, MGFC0905 Package MGF0904A, MGF0905A DESCRIPTION MGFC0905/MGF0905A FEATURES The MGF0904A and MGF0905A GaAs FETs with N-channel Schottky gates, are designed for use in UHF through S-band amplifiers.	OCR Scan	PDF	MGF0904A MGF0905A MGFC0904/MGF0904AFEATURES 600mW MGFC0904, MGFC0905 MGF0904A, MGF0905A MGFC0905/MGF0905A 200mW
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A . GaAs F ET w ith an N-channel sc h o ttk y gate, is designed fo r use in U H F band am plifiers, FEATURES • High o u tp u t power • High power gain	OCR Scan	PDF	F0904A 28dBm 15dBm 65GHz, 15dBm
MGF1200 Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.	OCR Scan	PDF	MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A
MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	PDF	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A