MGF0951P
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:
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MGF0951P
MGF0951P
25deg
61GHz
-10MHz)
10MHz)
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MGF0951P
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:
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MGF0951P
MGF0951P
35GHz
25deg
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12W SMD
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
12W SMD
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
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0951P
Abstract: MGF0951P 60Ghz mitsubishi mgf
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
0951P
60Ghz
mitsubishi mgf
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MGF0951P
Abstract: dsae001680
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:
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MGF0951P
MGF0951P
35GHz
25deg
dsae001680
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MGF0951P
Abstract: rf id
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:
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MGF0951P
95GHz
MGF0951P
25deg
-900KHz)
900KHz)
-600KHz)
rf id
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
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MGF0951P
Abstract: RF0-30 C4-20P
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:
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MGF0951P
MGF0951P
25deg
1000pF
51ohm
RF0-30
C4-20P
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MGF0951P
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:
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MGF0951P
95GHz
MGF0951P
25deg
-900KHz)
900KHz)
-600KHz)
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PDF
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MGF0951P
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:
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MGF0951P
17GHz
MGF0951P
14GHz
25deg
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0951P
Abstract: po 254
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
June/2004
0951P
po 254
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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