RG1000
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
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MGF0953P
MGF0953P
15GHz
10dBm
15GHz
RG1000
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
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MGF0953P
MGF0953P
15GHz
10dBm
15GHz
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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MGF0953P
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET Plastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @ f=2.15GHz,Pin=10dBm
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MGF0953P
MGF0953P
15GHz
10dBm
15GHz
25deg
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET fPlastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @f=2.15GHz,Pin=10dBm
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OCR Scan
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MGF0953P
MGF0953P
15GHz
10dBm
15GHz
25deg
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