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Mitsubishi Electric MGFC39V7785A-56
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Bristol Electronics	MGFC39V7785A-56		54			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MGFC39V7785 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC39V7785		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
MGFC39V7785		Unknown	FET Data Book		Scan	PDF
MGFC39V7785A		Mitsubishi	7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC39V7785A		Mitsubishi	7.7-8.5 GHz Band 8W Internally Matched GaAs FET		Scan	PDF

MGFC39V7785 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MGFC39V7785A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V7785A MGFC39V7785A 28dBm 10MHz	PDF
mgfc39v7785 Abstract: MGFC39V7785A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.	Original	MGFC39V7785A MGFC39V7785A 28dBm 10MHz June/2004 mgfc39v7785	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC39V7785A MGFC39V7785A -45dBc 28dBm	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC39V7785A MGFC39V7785A -45dBc 28dBm	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785 7.7 ~ 8 .5 G H z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit, millimeters inches The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8.5	OCR Scan	MGFC39V7785 27C102P, RV-15	PDF
MGF4404A Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045 Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D	OCR Scan	MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045	PDF
I8155 Abstract: MGFC39V4450-51 MGFC39V7177-01 Text: ^M ITSUBISHI MGFC39VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC39VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50Q • High output power	OCR Scan	MGFC39VXXXX MGFC39VXXXX MGFC39V5258-01 MGFC39V5258-51 MGFC39V5964-01 MGFC39V5964-51 MGFC39V6471-01 MGFC39V6471-51 MGFC39V7177-01 MGFC39V7177-51 I8155 MGFC39V4450-51	PDF
39V77 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V77 8SA 7 .7 ~ 8 .5 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A isan internally im pedance-m atched GaAs power FET especially designed fo r use in 7 , 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	39V77	PDF