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Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFL48V1920
MGFL48V1920
20ohm
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MGFL48V1920
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFL48V1920
MGFL48V1920
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s band
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFL48V1920
MGFL48V1920
20ohm
s band
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8002 1011 amplifier
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFL48V1920
MGFL48V1920
gate22
8002 1011 amplifier
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MGFL48V1920
Abstract: 12v 20A WITH FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFL48V1920
MGFL48V1920
12v 20A WITH FET
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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CM32
Abstract: MGFL48V1920 GR-70
Text: Preliminary MITSUBISHI SEMICONDUCTOR «^QaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFL48V1920
MGFL48V1920
25deg
Gat-98
CM32
GR-70
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