NSP5665
Abstract: sat 1205
Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1481 *
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2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
2N1486
O-254
NSP6340
NSP5665
sat 1205
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40X40
Abstract: MJEC350
Text: ÍJhN BF MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability.
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MJEC350
VEB-30Vdc.
lc-01
40X40
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Untitled
Abstract: No abstract text available
Text: ?M VE5 MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 VOLTS .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability. •
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OCR Scan
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MJEC350
3kA/10kA/10kA
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Untitled
Abstract: No abstract text available
Text: ftnasr Back to Bipolar Power Transistors MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP
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OCR Scan
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3kA/10kA/10kA
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