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    onsemi MMBT2222AWT1G

    TRANS NPN 40V 0.6A SC70-3
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    PanJit Group MMBT2222AW_R1_00001

    SOT-323, TRANSISTOR
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    onsemi SMMBT2222AWT1G

    TRANS NPN 40V 0.6A SC70-3
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    onsemi MMBT2222AWT3G

    TRANS NPN 40V 0.6A SC70-3
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    onsemi MMBT2222AWT1

    TRANS NPN 40V 0.6A SC70-3
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    MMBT2222AW Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT2222AW Kexin General Purpose Transistor Original PDF
    MMBT2222AW On Semiconductor General Purpose Transistor Original PDF
    MMBT2222AW PanJit Semiconductors NPN GENERAL PURPOSE SWITCHING TRANSISTOR Original PDF
    MMBT2222AW Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBT2222AW TY Semiconductor General Purpose Transistor - SOT-323 Original PDF
    MMBT2222AW Weitron NPN General Purpose Transistors Original PDF
    MMBT2222AW_R1_00001 PanJit Group SOT-323, TRANSISTOR Original PDF
    MMBT2222AWT1 Leshan Radio Company Preliminary Information General Purpose Transistors Original PDF
    MMBT2222AWT1 Motorola Silicon NPN Transistor Original PDF
    MMBT2222AWT1 On Semiconductor General Purpose Transistor Original PDF
    MMBT2222AWT1 On Semiconductor General Purpose Transistor Original PDF
    MMBT2222AWT1 On Semiconductor General Purpose Transistor Original PDF
    MMBT2222AWT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBT2222AWT1-D On Semiconductor General Purpose Transistor NPN Silicon Original PDF
    MMBT2222AWT1G On Semiconductor General Purpose Transistor NPN Original PDF
    MMBT2222AWT3 On Semiconductor MMBT2222 - TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN, BIP General Purpose Small Signal Original PDF
    MMBT2222AWT3G On Semiconductor MMBT2222 - TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN, BIP General Purpose Small Signal Original PDF

    MMBT2222AW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AWT1G, MMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com


    Original
    PDF MMBT2222AWT1G, SMMBT2222AWT1G OT-323/SC-70 AEC-Q101 SC-70 MMBT2222AWT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES FEATURES • · · Epitaxial Epitaxial Planar Planar Die Die Construction Construction SOT-323 A Complementary PNP


    Original
    PDF MMBT2222AW OT-323 MMBT2907AW) 01-Jun-2004

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original
    PDF MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) mAdc400

    MMBT2907AW

    Abstract: MMBT2222AW
    Text: MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE    A Complementary NPN Type Available MMBT2222AW Epitaxial Planar Die Construction


    Original
    PDF MMBT2907AW OT-323 MMBT2222AW) 20-Oct-2009 -150mA, -15mA -150mA MMBT2907AW MMBT2222AW

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU MMBT2222AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original
    PDF FM120-M+ MMBT2222AW FM1200-M+ OD-123+ OD-123H 323/SC FM120-MH FM130-MH FM140-MH FM150-MH

    MMBT2222AW

    Abstract: No abstract text available
    Text: MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Value Symbol Unit MMBT2222W MMBT2222AW Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage


    Original
    PDF MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW

    Untitled

    Abstract: No abstract text available
    Text: Product specification MMBT2222AW Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO


    Original
    PDF MMBT2222AW X10-4

    MMBT2222AW

    Abstract: No abstract text available
    Text: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE    Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction


    Original
    PDF MMBT2222AW OT-323 MMBT2907AW) 150mA, 150mA 10-Dec-2012 MMBT2222AW

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AWT1G, MMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com


    Original
    PDF MMBT2222AWT1G, SMMBT2222AWT1G 323/SCâ MMBT2222AWT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AW 3 * “G” Lead Pb -Free 1 2 SOT-323(SC-70) VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original
    PDF MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) Sa400

    MMBT2222AW

    Abstract: No abstract text available
    Text: MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value MMBT2222W MMBT2222AW Unit Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage


    Original
    PDF MMBT2222W MMBT2222AW MMBT2222W MMBT2222AW

    1n914 SOT323

    Abstract: No abstract text available
    Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com


    Original
    PDF MMBT2222AWT1 OT-323/SC-70 SC-70 1n914 SOT323

    M2A transistor

    Abstract: 1N914 MMBT2222AW TRANSISTOR SE 135 1n914 sot
    Text: DATA SHEET MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 600mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb


    Original
    PDF MMBT2222AW OT-323 600mA MIL-STD-202, OT-323, M2A transistor 1N914 MMBT2222AW TRANSISTOR SE 135 1n914 sot

    1N914

    Abstract: MMBT2222AWT1
    Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com


    Original
    PDF MMBT2222AWT1 323/SC r14525 MMBT2222AWT1/D 1N914 MMBT2222AWT1

    marking 6AA SOD

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is


    Original
    PDF 323/SC MMBT2222AWT1 323/SC marking 6AA SOD

    M2A transistor

    Abstract: No abstract text available
    Text: MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit:inch mm • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V 0.087(2.20) 0.070(1.80) • Collector current IC = 600mA • / 


    Original
    PDF MMBT2222AW 600mA OT-323 OT-323, MIL-STD-750, 2010-REV RB500V-40 MMBT2222AW M2A transistor

    MARKING P1 TRANSISTOR

    Abstract: TRANSISTOR SMD p1 smd transistor marking p1 FR MARKING SMD TRANSISTOR smd TRANSISTOR marking ku transistor SMD f 833 SMD TRANSISTOR MARKING BR MMBT2222AW X10-4
    Text: Transistors IC SMD Type General Purpose Transistor MMBT2222AW Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75


    Original
    PDF MMBT2222AW X10-4 MARKING P1 TRANSISTOR TRANSISTOR SMD p1 smd transistor marking p1 FR MARKING SMD TRANSISTOR smd TRANSISTOR marking ku transistor SMD f 833 SMD TRANSISTOR MARKING BR MMBT2222AW X10-4

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Transistors Switching Transistors NPN − MMBT3904WT1 MMBT2222AWT1 MMBT4401WT1 MMBT3904TT1 MMBT2222ATT1 PNP MMBT2907AWT1 MMBT3906WT1 − − MMBT4403WT1 MMBT3906TT1 − V BR CEO IC mA Max Min 60 40 40 40 40 40 600 200 200 600 600


    Original
    PDF MMBT3904WT1 MMBT2222AWT1 MMBT4401WT1 MMBT2907AWT1 MMBT3906WT1 MMBT4403WT1 SC-70, OT-323 MMBT3904TT1 MMBT3906TT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com


    Original
    PDF MMBT2222AWT1 323/SC

    1N914

    Abstract: MMBT2222AWT1 SMD310
    Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com


    Original
    PDF MMBT2222AWT1 323/SC r14525 MMBT2222AWT1/D 1N914 MMBT2222AWT1 SMD310

    1N914

    Abstract: MMBT2222AWT1 MMBT2222AWT1G
    Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com


    Original
    PDF MMBT2222AWT1 OT-323/SC-70 MMBT2222AWT1/D 1N914 MMBT2222AWT1 MMBT2222AWT1G

    MMBT2222AWT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon MMBT2222AWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount


    Original
    PDF MMBT2222AWT1 323/SC MMBT2222AWT1

    BT2222AW

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Prelim inary Inform ation General Purpose Transistor MMBT2222AW T1 NPN Silicon M otorola Preferred D evice These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T - 3 2 3 /S C -7 0 package which is


    OCR Scan
    PDF MMBT2222AW BT2222AW

    BT2222AW

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T -3 2 3 /S C -7 0 package which is


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    PDF MMBT2222AWT1 QG13G71 BT2222AW