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Catalog Datasheet	MFG & Type	Document Tags	PDF
D41416 Abstract: PD41416 Text: N E C ELECTRONICS 6427525 N E C ELECTRONICS I NC T I D E « L 4 2 7 S 55 0 D1 0 7 Sfl INC 9 1 D 10758 D T-46,'23-15 MPD41416 16,384 X 4-BIT DYNAMIC NMOS RAM NEC NEC Electronics Inc. Revision 2 Description Pin Configuration The fiPD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single	OCR Scan	uPD41416 384-word PD41416 fiPD41416 83-0C17W D41416	PDF
U7777 Abstract: D41416 Text: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias	OCR Scan	D41416 uPD41416 384-word nPD41416 jPD41416 if7777777/ 83-001785B U7777	PDF
D41416 Abstract: PD41416 PD41416-15 HPD41416-12 PD41416-12 Text: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias	OCR Scan	D41416 uPD41416 384-word nPD41416 jPD41416 3-001783A 3-001784A 83-001785B PD41416 PD41416-15 HPD41416-12 PD41416-12	PDF
41416 Abstract: DHR NEC PD41416 MPD41416-12 Text: SEC JUPD41416 1 6 ,3 8 4 X 4-B IT D YNA M IC NMOS RAM NEC Electronics Inc. Revision 2 D e s c rip tio n P in C o n fig u ra tio n The /¿PD41416 is a 16,384-word by 4-bit dynam ic Nchannel M O S RAM designed to operate from a single + 5 V power supply. The negative voltage substrate bias	OCR Scan	UPD41416 PD41416 384-word jPD41416 83-001785B 41416 DHR NEC MPD41416-12	PDF