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    MRF8372 Search Results

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    MRF8372 Price and Stock

    Microchip Technology Inc MRF8372

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372 Bulk 2,500
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    • 10000 $1.4375
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    Microchip Technology Inc MRF8372G

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372G Bulk 2,500
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    • 10000 $1.4375
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    Microchip Technology Inc MRF8372R1

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372R1 Reel 2,500
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    • 10000 $1.4375
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    Microchip Technology Inc MRF8372R2

    RF TRANS NPN 16V 870MHZ 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF8372R2 Reel 2,500
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    Microchip Technology Inc MRF8372MR1

    TRANS NPN 16V 200MA
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    DigiKey MRF8372MR1 Reel
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    MRF8372 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF8372 Advanced Semiconductor NPN SILICON LOW POWER TRANSISTOR Original PDF
    MRF8372 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF8372 Microsemi Bipolar/LDMOS Transistor Original PDF
    MRF8372 Motorola RF LOW POWER TRANSISTOR NPN SILICON Original PDF
    MRF8372 Motorola European Master Selection Guide 1986 Scan PDF
    MRF8372 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF8372G Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF8372G Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8 Original PDF
    MRF8372GR1 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8 Original PDF
    MRF8372GR2 Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 200MA SO8 Original PDF
    MRF8372R1 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF8372R1 Motorola RF LOW POWER TRANSISTOR NPN SILICON Original PDF
    MRF8372R2 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF8372R2 Motorola RF LOW POWER TRANSISTOR NPN SILICON Original PDF

    MRF8372 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8372 motorola

    Abstract: NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz
    Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


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    MRF8372/D MRF8372R1, MRF8372 8372 motorola NPN TRANSISTOR Z4 Conjugated power amplifier MRF8372 equivalent J31 transistor marking Z4 MRF837 MRF8372R1 960-MHz PDF

    MRF8372

    Abstract: MRF8372G
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical


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    MRF8372, MRF8372G, 870MHz, MRF8372 MRF8372G PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package DESCRIPTION: SO-8 R1 suffix–Tape and Reel, 500 units


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    MRF8372, 870MHz, PDF

    MRF8372

    Abstract: PG 750 8 PIN
    Text: MRF8372 NPN SILICON LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. PACKAGE STYLE SO-8 FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60% typical • R1 suffix – Tape and Reel, 500 units


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    MRF8372 MRF8372 PG 750 8 PIN PDF

    mrf8372

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


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    MRF837/D MRF837 MRF8372, MRF837 MRF837/D* mrf8372 PDF

    52803

    Abstract: No abstract text available
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units


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    MRF8372, MRF8372 870MHz, MRF8372 52803 PDF

    motorola 8372

    Abstract: 8372 motorola
    Text: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


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    MRF8372/D MRF8372 MRF8372R1, MRF8372/D motorola 8372 8372 motorola PDF

    MRF8372

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB


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    MRF8372, 870MHz, MSC1318 MRF8372 PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF8372, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF8372G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical


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    MRF8372, MRF8372G, 870MHz, PDF

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


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    MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581 PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    mce544

    Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
    Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


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    MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630 PDF

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


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    2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 PDF

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


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    714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861 PDF

    MRF586

    Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


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    MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904 PDF

    BFR91 transistor

    Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB


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    MRF557 BFR90 MRF545 MRF544 MRF557 BFR91 transistor 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96 PDF

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553 PDF

    MRF553G

    Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


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    MRF553 MRF553G MRF553G 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553 PDF

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 PDF

    s-parameter 2N4427

    Abstract: S-parameter 2N5179 BFR91
    Text: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units


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    MRF5943, 300MHz TempeMRF545 MRF544 s-parameter 2N4427 S-parameter 2N5179 BFR91 PDF

    BFR91

    Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz


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    BFR91 Vdc00 MRF571 BFR90 MRF545 MRF544 MSC1308 BFR91 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 PDF

    MRF559

    Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB


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    MRF559 2N5109 2N4427 MRF4427, MSC1317 MRF559 mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF8372 The RF Line NPN Silicon High-Frequency TVansistor . . . designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW


    OCR Scan
    MRF8372 9-j20 MRF8372 PDF

    ferroxcube 56-590-65

    Abstract: MRF8372 equivalent macro-X ceramic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics


    OCR Scan
    MRF8372 2-J16 MRF837 MRF8372, ferroxcube 56-590-65 MRF8372 equivalent macro-X ceramic PDF