PIN photodiode 850nm
Abstract: MXP7000 MXP7001
Text: MXP7001 – 12.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S 10Gigabit Ethernet, Fibre Channel
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PDF
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MXP7001
10Gigabit
MXP7000
850nm
PIN photodiode 850nm
MXP7001
|
Untitled
Abstract: No abstract text available
Text: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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Original
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PDF
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MXP7001
10Gbps
MXP7000
850nm
850nm
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VCSEL array, 850nm flip
Abstract: MXP7001
Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
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Original
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PDF
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MXP7001
850nm
VCSEL array, 850nm flip
MXP7001
|
VCSEL array, 850nm flip
Abstract: MXP7001 GaAs array, 850nm
Text: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
|
Original
|
PDF
|
MXP7001
VCSEL array, 850nm flip
MXP7001
GaAs array, 850nm
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