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    N3007 Search Results

    N3007 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    H5N3007CF-E Renesas Electronics Corporation N Channel MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    H5N3007FN-E Renesas Electronics Corporation N Channel MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
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    N3007 Price and Stock

    Diodes Incorporated DMN3007LSSQ-13

    MOSFET N-CHANNEL 30V 16A 8SO
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    DigiKey DMN3007LSSQ-13 Cut Tape 1,698 1
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    DMN3007LSSQ-13 Digi-Reel 1,698 1
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    DMN3007LSSQ-13 Reel 2,500
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    Avnet Americas DMN3007LSSQ-13 Reel 8 Weeks 2,500
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    Mouser Electronics DMN3007LSSQ-13 4,162
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    Newark DMN3007LSSQ-13 Cut Tape 2,490 1
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    Avnet Silica DMN3007LSSQ-13 10 Weeks 2,500
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    Microchip Technology Inc 1N3007B

    DIODE ZENER 110V 10W DO213AA
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    Avnet Americas 1N3007B Bulk 35 Weeks 100
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    Mouser Electronics 1N3007B
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    Microchip Technology Inc 1N3007B 35 Weeks
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    Master Electronics 1N3007B
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    Microchip Technology Inc 1N3007A

    DIODE ZENER 110V 10W DO213AA
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    Mouser Electronics 1N3007A
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    Microchip Technology Inc 1N3007A 35 Weeks
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    Master Electronics 1N3007A
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    Tripp Lite IN3007KB

    NOTEBOOK LAPTOP OFFICE KEYBOARD
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    Microchip Technology Inc 1N3007RB

    DIODE ZENER 110V 10W DO213AA
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    Mouser Electronics 1N3007RB
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    Newark 1N3007RB Bulk 100
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    Microchip Technology Inc 1N3007RB 35 Weeks
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    NAC 1N3007RB Tray 9
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    Master Electronics 1N3007RB
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    N3007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PC73UD85C14CTF

    Abstract: PC73UD13C630TF V300513 W300514 G300524 S300718
    Text: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 7x - 650 V to 1300 VAC IEC Terminals - French 70 - 73 End contacts Size 70 71 72 73 Designation 12,5 12,5 12,5 12,5 12,5 12,5 12,5 12,5 12 12 11 11 11 10 8 12,5 12,5 12,5


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    PDF SCAC130 PC73UD85C14CTF PC73UD13C630TF V300513 W300514 G300524 S300718

    Untitled

    Abstract: No abstract text available
    Text: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V


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    PDF DMN3007LSS AEC-Q101 J-STD-020D DS31460

    DMN3007LSS

    Abstract: N3007 N3007LS DMN3007LSS-13
    Text: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF DMN3007LSS AEC-Q101 J-STD-020 MIL-STD-202, DS31460 DMN3007LSS N3007 N3007LS DMN3007LSS-13

    Untitled

    Abstract: No abstract text available
    Text: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7m @ VGS = 10V • 10m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF DMN3007LSS AEC-Q101 J-STD-020 MIL-STD-202 DS31460

    DMN3007LSS

    Abstract: N3007LS
    Text: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF DMN3007LSS AEC-Q101 J-STD-020 MIL-STD-202, DS31460 621-DMN3007LSS-13 DMN3007LSS-13 DMN3007LSS N3007LS

    DMN3007LSS

    Abstract: DMN3007LSS-13 J-STD-020D N3007LS
    Text: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage


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    PDF DMN3007LSS AEC-Q101 J-STD-020D DS31460 DMN3007LSS DMN3007LSS-13 J-STD-020D N3007LS

    Untitled

    Abstract: No abstract text available
    Text: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 7mΩ @ VGS = 10V 16A 10mΩ @ VGS = 4.5V 13.5A V(BR)DSS 30V Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


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    PDF DMN3007LSS AEC-Q101 DS31460

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    PDF

    W300514

    Abstract: PC273UD13C11CTF F300523 PROTISTOR FERRAZ 1000V H300525 B300496 S300511 PC73UD13C630TF E301994 V300513
    Text: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 7x - 650 V to 1300 VAC Main characteristics Recognized 650 to 1300VAC / 63 to 2800A. • • • • • • • • Exceptionally low I2T, Watt losses. Non-magnetic construction, highly reliable low voltage.


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    PDF 1300VAC W098804 M10x50 M12x50 X098805 M8x30 M8x35 M10x30 M10x50 W300514 PC273UD13C11CTF F300523 PROTISTOR FERRAZ 1000V H300525 B300496 S300511 PC73UD13C630TF E301994 V300513

    N3007LS

    Abstract: No abstract text available
    Text: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V


    Original
    PDF DMN3007LSS AEC-Q101 J-STD-020D DS31460 N3007LS

    MN3007

    Abstract: N3007 s3d8 MN3000 series
    Text: MN3000 Series N3007 N3007 1024-STAGE LOW NOISE BBD • General description U n it: mm inch The M N3007 is a 1024-stage long delay low noise BBD th a t provides a signal delay o f up to 51.2msec. The M N3007 is p a rticu la rly suitable fo r use as reverberation


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    PDF MN3000 MN3007 1024-STAGE N3007 12KHz. 100KHz. MN3007 s3d8 MN3000 series

    MN3007

    Abstract: reverb chorus Effect reverberation delay mn3007 MN3000 TA2512
    Text: MN3000 Series N3007 N3007 1024-STAGE LOW NOISE BBD • General description U n it: mm inch The M N3007 is a 1024-stage long delay low noise BBD th a t provides a signal delay o f up to 51.2msec. The M N3007 is p a rticu la rly suitable fo r use as reverberation


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    PDF MN3000 MN3007 1024-STAGE MN3007 12KHz. 78Vrms) 100KHz. reverb chorus Effect reverberation delay mn3007 TA2512

    MN3007

    Abstract: bbd delay MN3008 vte18i03v MN301 reverb AN6551 L-12 MM3009 MN3009
    Text: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS IVI W O IV^, E le c tric a l C h a ra c te ristic s Function T yp e No. (T a — 25°C) Signal D elay T im e Input Signal Frequency V 0 = —1 8 ^ + 0 . 3V Signal Delays fi I n p u t S i g n a l S w in g Vi I n s e r ti o n L osj


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    PDF 10kHz 100kHz 40kHz. 78Vrms 1024-stage 100kHz MN3007 bbd delay MN3008 vte18i03v MN301 reverb AN6551 L-12 MM3009 MN3009

    flanger

    Abstract: MN3007 N3006 chorus Effect mn3001 MN3008 MN3010 N3009 mn3002 delay MN3005
    Text: BBD's for variable delay lines in audio frequency range & M N 3001 M N 3 00 2 M N 3003 M N 3005 M N 3008 M N 3006 M N 3007 M N 3 00 9 È S ^^Ê ^^iâÊ S Ê ^^^^^^^S Ê Ê S Ê ÎÊ ^S âS S Ê ^S ^^S S Ê ^^& & Ê Ê ^IiS S Ê Ê ^Ê i t D —fcP 500 •


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    PDF MN3001 MN3006 N3002 MN3008 MN3007 MN3003 N3009 N3006 N3004 flanger MN3007 N3006 chorus Effect MN3010 N3009 mn3002 delay MN3005

    Untitled

    Abstract: No abstract text available
    Text: '' MN3003 Series [• mr HIGH-ACCURACY 10-Bit D/A C O N VERTERS MICRO NETWORKS DESCRIPTION FEATURES T h e M N 3 0 0 3 S e rie s a re 10-bit, v o lta g e -o u tp u t, d ig ita l-to a n a lo g c o n v e rte rs . E a c h u n it is c o m p le te w ith in te rn a l


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    PDF MN3003 10-Bit 10-bit, 16-pin,

    Untitled

    Abstract: No abstract text available
    Text: MOS 1C, LSI N3007 M N 3007 □ 1 0 2 4 - -r x s b b d 1024-Stage Low Noise B B D for Analog Signal Delays H #St ^ /D e sc rip tio n M N 3007 l ± , Unit ' i 3 3 6 S 3 & 1024 X B B D T", ° > ? 'r " -f H o - y >f 3.3 + 0.1 5 1 .2 m s * ' ? # h J x i t . ilx i$i X" i - o


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    PDF MN3007 1024-Stage N3007

    2AN6551

    Abstract: No abstract text available
    Text: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS 1C, LSI E le c tr ic a l C h a r a c te r is t ic s T y p e No. F u n c tio n (T a = 2 5 °C ) VTE= —18— h0.3V Ite m Sym bol Signal Delay Time Vo= —18 — 1-0.3V Input Signal 1’requencv T opr=-20~+60t


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    PDF MN3007 N3007 N3008 N3009 1/2AN6551 MN3010 AN6551 AN65SÂ 2AN6551