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    Fairchild Semiconductor Corporation NDB610A

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 26A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA NDB610A 797
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    NDB610A Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDB610A Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB610A National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB610A National Semiconductor TO-263AB DMOS Power MOSFET Scan PDF
    NDB610AE Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB610AE National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB610AE National Semiconductor TO-263AB DMOS Power MOSFET Scan PDF
    NDB610AEL National Semiconductor TO-263AB Logic Level DMOS Power MOSFETS Scan PDF
    NDB610AL National Semiconductor TO-263AB Logic Level DMOS Power MOSFETS Scan PDF

    NDB610A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DON60

    Abstract: NDB610A NDB610AE NDB610B NDB610BE NDP610A NDP610AE NDP610B NDP610BE
    Text: May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


    Original     		PDF NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610 DON60 NDB610BE NDP610BE

    NDB610A

    Abstract: NDB610AE NDB610B NDB610BE NDP610A NDP610AE NDP610B NDP610BE DON60 MJ-26
    Text: N May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		PDF NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610 NDB610BE NDP610BE DON60 MJ-26

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    NDP610A

    Abstract: No abstract text available
    Text: May 1994 PAIRCHII-D M ICDNDUCTQ R tm NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610

    Untitled

    Abstract: No abstract text available
    Text: May 1994 N NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan     		PDF NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610

    610B

    Abstract: NDB610A NDB610AE NDB610B NDB610BE NDP610A NDP610AE NDP610B NDP610BE
    Text: May 1994 N NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-ehannel enhancem ent mode power field effect transistors are produced using National's


    OCR Scan     		PDF NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610 610B

    NDB406B

    Abstract: NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL NDB610AEL NDB610AL NDB610BEL NDB610BL
    Text: _ . m bfiE D Power M O S F E T S continued bSD113Q 23b M N S C S TO-263AB Logic Level DMOS NATL SEMICOND (DISCRETE) N Channel N Channel r DS(OB)@ lo ^ B S (Volts) Min 100 Device Po b (Amps) (Watts) (mfì) (Amps/Volts) Max Max Max NDB710AEL 38 21/5 42 42


    OCR Scan     		PDF bSD113D O-263AB NDB710AEL NDB710AL NDB710BEL NDB710BL NDB610AEL NDB610AL NDB610BEL NDB610BL NDB406B NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL

    NDB406B

    Abstract: NDB605A National Semiconductor Discrete catalog NDB506B NDB510A NDB510AE NDB510B NDB610A NDB610AE NDB610B
    Text: böE D NATL TO-263AB DMOS SE I UCOND N Channel 100 Device NDB710A Po *D Amps (Watts) (mQ) (Amps/Volts) Max Max Max 38 21/10 42 42 21/10 40 65 13/10 26 (Volts) Min 150 80 80 12/10 NDB606B 24 120 7.5/10 15 150 6.5/10 13 250 4/10 8 300 3.5/10 7 NDB506A 60 NDB708A


    OCR Scan     		PDF O-263AB bSG113Q NDB710A NDB710AE NDB710B NDB710BE NDB610A NDB610AE NDB610B NDB610BE NDB406B NDB605A National Semiconductor Discrete catalog NDB506B NDB510A NDB510AE NDB510B NDB610A NDB610AE NDB610B