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    NE8500295 Price and Stock

    NEC Electronics Group NE8500295-8

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE8500295-8 60
    • 1 $20
    • 10 $20
    • 100 $12
    • 1000 $12
    • 10000 $12
    		Buy Now

    NE8500295 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE8500295 NEC Semiconductor Selection Guide Original PDF
    NE8500295 NEC Po GaAs FET C band driver one step power amplification Original PDF
    NE8500295-4 NEC 2 W C-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE8500295-6 NEC 2 W C-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE8500295-6-AZ NEC FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE8500295-8 NEC 2 W C-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE8500295-8-AZ NEC FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF

    NE8500295 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE85002

    Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.


    Original     		PDF NE85002 NE8500295 NE8500200 NE8500200 NE8500200-RG NE8500200-WB NE8500295-4 NE8500295-6 NE8500295-8

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    Untitled

    Abstract: No abstract text available
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip


    Original     		PDF NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    80500 TRANSISTOR

    Abstract: 0-647-55 AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip


    Original     		PDF NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 80500 TRANSISTOR 0-647-55 AN-1001 NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    NE85002

    Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1817 transistor

    Abstract: NE8500295-4 NE8500295-6 NE8500295-8
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 95 f 2.5±0.3 2 PLACES 0.7±0.1 4.0 MIN GATE SOURCE 5.9±0.2 DRAIN +.06 0.1 -.02 6.5±0.3 14.0±0.15 18.0±0.5 4.5 MAX 2.1±0.15 0.2 MAX


    Original     		PDF NE8500295-4 NE8500295-6 NE8500295-8 24-Hour 1817 transistor NE8500295-4 NE8500295-6 NE8500295-8

    80500 TRANSISTOR

    Abstract: AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
    Text: NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip


    Original     		PDF NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 AN-1001 24-Hour 80500 TRANSISTOR NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    nec d 1590

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem ent matching network.


    OCR Scan     		PDF NE85002 NE8500295 NE8500200 CODE-95 nec d 1590

    ne900075

    Abstract: NE9000
    Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27


    OCR Scan     		PDF NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000

    80500 TRANSISTOR

    Abstract: No abstract text available
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200


    OCR Scan     		PDF NE85002 NE8500295 AN-1001 80500 TRANSISTOR

    80500 TRANSISTOR

    Abstract: J1186 J56-1 J-2-502
    Text: NEC 2 WATT C-B AN D POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART • CLASS A OPERATION • HIGH EFFICIENCY: ^ add 2 39% TYP • BROADBAND CAPABILITY • PACKAGE OPTIONS: TYPICAL PERFORMANCE FREQUENCY G l RANGE dBm (GHz) (dB) PART NUMBER P out


    OCR Scan     		PDF NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour 80500 TRANSISTOR J1186 J56-1 J-2-502

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES • SELECTION CHART • HIGH EFFICIENCY: r ADD > 3 5 % T Y P • BROADBAND CAPABILITY • TYPICAL PERFORMANCE CLASS A OPERATION PACKAGE OPTIONS: Chip Herm etic Package • PARTIALLY MATCHED INPUT FOR PACKAGED


    OCR Scan     		PDF NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 AN-1001

    NEM0899F01-30

    Abstract: No abstract text available
    Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added


    OCR Scan     		PDF NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30