NP24N06ILB Search Results

NP24N06ILB Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NP24N06ILB		NEC	SWITCHING N-CHANNEL POWER MOS FET		Original	PDF
NP24N06ILB		NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE		Scan	PDF

NP24N06ILB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D1345 Abstract: NP24N06HLB NP24N06ILB Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N06HLB, NP24N06ILB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE	Original	NP24N06HLB, NP24N06ILB O-251 NP24N06HLB O-252 O-251) D1345 NP24N06HLB NP24N06ILB	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
STF12A80 Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer	Original	02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B	PDF
TO220-SMD Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10 Text: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V	Original	BUK465-100A BUK466-100A BUK565-100A BUK7608-55 BUK7614-55 BUK7618-55 BUK7620-55 BUK7624-55 BUK7628-5 BUK7635-55 TO220-SMD TO-220SMD TO220SMD NP55N06ELD STB80N06-10	PDF
TO-252 MOSFET p channel Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering	Original	NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE	PDF
TO-252 MOSFET p channel Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive	Original	Q3/2001 NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS071V50 TO-252 MOSFET p channel nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE	PDF
NP24N06HLB Abstract: NP24N06ILB MOS 6502 Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect PowerTransistor N P 2 4 N 0 6 H L B ,N P 2 4 N 0 6 1 L B SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeter DESCRIPTION This product is N-Channel MOS Field Effect Transistor de	OCR Scan	NP24N06HLB NP24N061LB 70mfi 90mi2 860pF O-251 NP24N06ILB O-252 MOS 6502	PDF