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    NTE23 Price and Stock

    NTE Electronics Inc NTE2397

    Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220
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    Arrow Electronics NTE2397 3 1
    • 1 $0.4127
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    RS NTE2397 Bulk 23 1
    • 1 $6.24
    • 10 $6.24
    • 100 $5.68
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    NTE Electronics Inc NTE235

    Transistor, Npn, 75V, 5A, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:75V; Continuous Collector Current:5A; Power Dissipation:1.2W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:150Mhz Rohs Compliant: Yes |Nte Electronics NTE235
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    NTE Electronics Inc NTE2302

    Bipolar Transistor, Npn, 800V; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:5A; Power Dissipation:120W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Nte Electronics NTE2302
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    Onlinecomponents.com NTE2302 20
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    • 100 $5.41
    • 1000 $4.83
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    NTE2302 7 1
    • 1 $11.2
    • 10 $7.28
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    Quest Components NTE2302 19
    • 1 $8.337
    • 10 $6.1138
    • 100 $5.558
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    NTE2302 14
    • 1 $11.745
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    NTE2302 10
    • 1 $11.745
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    NTE2302 5
    • 1 $15
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    NTE2302 5
    • 1 $16
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    NTE Electronics Inc NTE2339

    Transistor, Bipolar, Npn, 800V, 3A, To-220-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:3A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nte Electronics NTE2339
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    NTE Electronics Inc NTE2341

    Bipolar Transistor, Npn, 80V; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:800Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: Yes |Nte Electronics NTE2341
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    Bristol Electronics NTE2341 2 1
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    NTE23 Datasheets (120)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE23 NTE Electronics Silicon NPN Transistor Ultra High Frequency Amp Original PDF
    NTE230 NTE Electronics Silicon Controlled Rectifier (SCR) TV Deflection Circuit Original PDF
    NTE2300 NTE Electronics Silicon NPN Transistor High Voltage, Horizontal Output Original PDF
    NTE2301 NTE Electronics Silicon NPN Transistor High Voltage Horizontal Output Original PDF
    NTE2302 NTE Electronics Silicon NPN Transistor Color TV Horizontal Deflection Output w /Damper Diode Original PDF
    NTE2302 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, High Voltage Horizontal Output w/Internal Damper Diode, TO3P Scan PDF
    NTE2303 NTE Electronics Silicon NPN Transistor Horizontal Deflection Original PDF
    NTE2304 NTE Electronics Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) Original PDF
    NTE2305 NTE Electronics Silicon Complementary Transistor High Voltage Power Amplifier Original PDF
    NTE2306 NTE Electronics Silicon Complementary Transistor High Voltage Power Amplifier Original PDF
    NTE2307 NTE Electronics Silicon NPN Transistor High Gain Power Amp Original PDF
    NTE2308 NTE Electronics Silicon NPN Transistor High Voltage, High Current Switch Original PDF
    NTE2308 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, High Voltage Current Switch, Pkg Style TO3 Scan PDF
    NTE2309 NTE Electronics Silicon NPN Transistor High Voltage, High Current Switch Original PDF
    NTE231 NTE Electronics Silicon Controlled Rectifier (SCR) TV Deflection Circuit Original PDF
    NTE2310 NTE Electronics Silicon NPN Transistor High Voltage, High Current Switch Original PDF
    NTE2311 NTE Electronics Silicon NPN Transistor High Voltage, High Speed Switch Original PDF
    NTE2312 NTE Electronics Silicon NPN Transistor High Voltage, High Current Switch Original PDF
    NTE2313 NTE Electronics Silicon NPN Transistor High Speed Switch Original PDF
    NTE2314 NTE Electronics Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) Original PDF

    NTE23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    300w power amplifier circuit diagram

    Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
    Text: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.


    Original     		NTE2349 NTE2350 250mA 500mA 200mA 300mA 300w power amplifier circuit diagram complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234 PDF

    SCR 200A 500V

    Abstract: NTE231
    Text: NTE231 Silicon Controlled Rectifier SCR TV Deflection Circuit Features: D CTV 110° − CRT Horizontal Deflection D Comutater Switch Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V


    Original     		NTE231 SCR 200A 500V NTE231 PDF

    NTE2392

    Abstract: No abstract text available
    Text: NTE2392 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical


    Original     		NTE2392 NTE2392 PDF

    scs thyristor

    Abstract: icer capacitor NTE239
    Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage


    Original     		NTE239 NTE239 scs thyristor icer capacitor PDF

    NTE2336

    Abstract: No abstract text available
    Text: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified


    Original     		NTE2336 500mA, 100mH, NTE2336 PDF

    NPN Transistor 1.5A 700V

    Abstract: No abstract text available
    Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection


    Original     		NTE2318 NTE2318 NPN Transistor 1.5A 700V PDF

    NTE2308

    Abstract: No abstract text available
    Text: NTE2308 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


    Original     		NTE2308 NTE2308 PDF

    NTE2355

    Abstract: NPN Transistor TO92 40V 200mA NTE2356
    Text: NTE2355 NPN & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


    Original     		NTE2355 NTE2356 200mV, NTE2355 NPN Transistor TO92 40V 200mA NTE2356 PDF

    NTE2322

    Abstract: DSA001397
    Text: NTE2322 Silicon PNP Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


    Original     		NTE2322 600mA 100MHz NTE2322 DSA001397 PDF

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


    Original     		NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2375 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID


    Original     		NTE2375 PDF

    nte2366

    Abstract: ic 339 NTE399
    Text: NTE2366 Silicon PNP Transistor High Voltage Video Amp Compl to NTE399 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V


    Original     		NTE2366 NTE399) 100mA nte2366 ic 339 NTE399 PDF

    ZENER 148 Datasheet

    Abstract: IC 406
    Text: NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built–In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified


    Original     		NTE2340 100mH, ZENER 148 Datasheet IC 406 PDF

    NTE2398

    Abstract: No abstract text available
    Text: NTE2398 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A


    Original     		NTE2398 NTE2398 PDF

    NTE2331

    Abstract: NPN VCEO 800V transistor for horizontal deflection output
    Text: NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Applications: D Color TV Horizontal Deflection Output D Color Display Horizontal Deflection Output Features: D High Speed tf = 100nsec D High Breakdown Voltage (VCBO = 1500V)


    Original     		NTE2331 100nsec) NTE2331 NPN VCEO 800V transistor for horizontal deflection output PDF

    NTE2372

    Abstract: No abstract text available
    Text: NTE2372 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements D TO220 Case Style Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A


    Original     		NTE2372 NTE2372 PDF

    27mhz rf ic

    Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


    Original     		NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf ic 27mhz rf amplifier NPN transistor 27mhz rf amplifier 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier PDF

    NTE2339

    Abstract: npn 10a 800v
    Text: NTE2339 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V


    Original     		NTE2339 300mA, NTE2339 npn 10a 800v PDF

    NTE2374

    Abstract: No abstract text available
    Text: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A


    Original     		NTE2374 NTE2374 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE237 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.


    Original     		NTE237 Freq150M StyleTO-39var Code3-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE399 Silicon NPN Transistor High Voltage Video Amp Compl to NTE2366 Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V


    Original     		NTE399 NTE2366) PDF

    NTE2382

    Abstract: NTE2383
    Text: NTE2382 MOSFET N–Channel Enhancement Mode, High Speed Switch Compl to NTE2383 Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay


    Original     		NTE2382 NTE2383) NTE2382 NTE2383 PDF

    NTE2385

    Abstract: No abstract text available
    Text: NTE2385 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A


    Original     		NTE2385 NTE2385 PDF

    NTE2325

    Abstract: npn 10a 800v
    Text: NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V Max D High Speed Switching: tf = 0.7µs (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original     		NTE2325 300mA 200mA 400mA, 800mA, NTE2325 npn 10a 800v PDF