P2503BDG Search Results

P2503BDG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P2503BDG		Unknown	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Original	PDF

P2503BDG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P2503BDG Abstract: P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem Text: NIKO-SEM P2503BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 12A 1.GATE 2.DRAIN 3.SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P2503BDG O-252 SEP-30-2004 P2503BDG P2503BD nikos EQUIVALENT* P2503 P2503 niko-sem	PDF
CAT7105CA Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A	Original	5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al	PDF
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)	Original	ELM32404LA-S ELM32404LA-S P2503BDG O-252	PDF
P2503 Abstract: No abstract text available Text: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)	Original	ELM32404LA-S ELM32404LA-S P2503BDG O-252 P2503	PDF
ELM32404LA Abstract: No abstract text available Text: 单 N 沟道 MOSFET ELM32404LA-S •概要 ■特点 ELM32404LA-S 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=12A ·Rds on < 25mΩ (Vgs=10V) ·Rds(on) < 37mΩ (Vgs=4.5V) ■绝对最大额定值项目	Original	ELM32404LA-S O-252 P2503BDG ELM32404LA	PDF
p2003bdg Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17 Text: Issue Number \| 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been	Original	DMN3024LSD DMN3024LSS DMN2027LK3 DMP3025LK3 DMN3020LK3 DMN3024LK3 DMN4009LK3 DMN4015LK3 DMN4030LK3 DMN4036LK3 p2003bdg p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17	PDF
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G	PDF
Untitled Abstract: No abstract text available Text: シングル N チャンネル MOSFET ELM32404LA-S •概要 ■特長 ELM32404LA-S は低入力容量低電圧駆動、低・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=12A ・ Rds on < 25mΩ (Vgs=10V) ・ Rds(on) < 37mΩ (Vgs=4.5V)	Original	ELM32404LA-S P2503BDG O-252	PDF