P5506BVG Search Results

P5506BVG Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P5506BVG		Niko Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor		Original	PDF
P5506BVG		Niko Semiconductor	N-Channel Logic Level Enhancement FET		Original	PDF

P5506BVG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P5506 Abstract: P5506BVG Text: P5506BVG N-Channel Logic Level Enhancement NIKO-SEM SOP-8 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P5506BVG SEP-30-2004 P5506 P5506BVG	PDF
CAT7105CA Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A	Original	5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al	PDF
ELM34404AA Abstract: No abstract text available Text: 单 N 沟道 MOSFET ELM34404AA-N •概要 ■特点 ELM34404AA-N 是 N 沟道低输入电容，低工作电压， •Vds=60V 低导通电阻的大电流 MOSFET。 ·Id=5.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值项目	Original	ELM34404AA-N P5506BVG SEP-30-2004 ELM34404AA	PDF
Untitled Abstract: No abstract text available Text: シングル N チャンネル MOSFET ELM34404AA-N •概要 ■特長 ELM34404AA-N は低入力容量低電圧駆動、低・ Vds=60V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=5.5A ・ Rds on < 55mΩ (Vgs=10V) ・ Rds(on) < 75mΩ (Vgs=4.5V)	Original	ELM34404AA-N P5506BVG SEP-30-2004	PDF
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G	PDF
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM34404AA-N •General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)	Original	ELM34404AA-N ELM34404AA-N P5506BVG SEP-30-2004	PDF
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM34404AA-N •General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)	Original	ELM34404AA-N ELM34404AA-N P5506BVG SEP-30-2004	PDF