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    Nexperia PBSS2515MB,315

    TRANS NPN 15V 0.5A DFN1006B-3
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    DigiKey PBSS2515MB,315 Digi-Reel 29,867 1
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    PBSS2515MB,315 Cut Tape 29,867 1
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    PBSS2515MB,315 Reel 10,000 10,000
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    Mouser Electronics PBSS2515MB,315 36,020
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    Avnet Silica PBSS2515MB,315 54 Weeks 10,000
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    EBV Elektronik PBSS2515MB,315 54 Weeks 10,000
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    Nexperia PBSS2515MB315

    Trans GP BJT NPN 15V 0.5A 3-Pin DFN T/R - Tape and Reel (Alt: PBSS2515MB,315)
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    Avnet Americas PBSS2515MB315 Reel 30,000
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    NXP Semiconductors PBSS2515MB,315

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    Bristol Electronics PBSS2515MB,315 6,030 14
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    Quest Components PBSS2515MB,315 4,824
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    PBSS2515MB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PBSS2515MB NXP Semiconductors 15 V, 0.5 A NPN low VCEsat (BISS) transistor Original PDF
    PBSS2515MB,315 NXP Semiconductors PBSS2515MB - 15 V, 0.5 A NPN low VCEsat (BISS) transistor, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF

    PBSS2515MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BISS 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2515MB OT883B PBSS3515MB. AEC-Q101 BISS 0001

    biss 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2515MB OT883B PBSS3515MB. AEC-Q101 biss 0001

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    MARKING CODE SMD IC

    Abstract: biss 0001 BATTERY CHARGER cutoff
    Text: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3515MB OT883B PBSS2515MB. AEC-Q101 MARKING CODE SMD IC biss 0001 BATTERY CHARGER cutoff

    TL431 SOT323

    Abstract: No abstract text available
    Text: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,


    Original     		PDF AN11045 TL431 SOT323

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3515MB OT883B PBSS2515MB. AEC-Q101