NT-1/4-0-SP-CS5480
Abstract: No abstract text available
Text: 16 M DRAM DATA COLLECTION 4 M-word by 4-bit, Revision A 1997 Document No. M12205XJ1V0IF00 1st edition Date Published January 1997 N Printed in Japan DRAM PROCESS 1 DIE PHOTOGRAPH 2 DIFFERENCES BETWEEN REVISION A AND REVISION L 3 µPD42S16405L, 4216405L
|
Original
|
M12205XJ1V0IF00
PD42S16405L,
4216405L
PD42S17405L,
4217405L
PD42S16405,
PD42S17405,
PD42S16400L,
4216400L
PD42S17400L,
NT-1/4-0-SP-CS5480
|
PDF
|
IR35207
Abstract: IR35-207
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16405, 4216405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The µPD42S16405, 4216405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
Original
|
PD42S16405,
PD42S16405
26-pin
PD42S16405-50,
IR35207
IR35-207
|
PDF
|
uPD42S16405LG3-A60-7JD
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The µPD42S16405L, 4216405L are 4,194,304 words by 4 bits CMOS dynamic RAM with optional hyper page mode (EDO).
|
Original
|
PD42S16405L,
4216405L
4216405L
PD42S16405L
26-pin
uPD42S16405LG3-A60-7JD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
|
Original
|
M10339EJ3V0UM00
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The µPD42S16405L, 4216405L are 4,194,304 words by 4 bits CMOS dynamic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
Original
|
PD42S16405L,
4216405L
4216405L
PD42S16405L
26-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M -W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which
|
OCR Scan
|
MC-424LFG641
64-BIT
MC-424LFG641F
MC-424LFG641FW
uPD4216405L
/iPD4265165)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic
|
OCR Scan
|
uPD4216405
64-ms
JPD4216405
26-Pin
iPD4216405G3-XX
G3-50-7KD
4216405G
3-70-7KD
//PD4216405LA-50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which
|
OCR Scan
|
MC-424LFC721
72-BIT
MC-424LFC721F
C-424LFC721FW
uPD4216405L
/iPD4265165)
PD4216405L)
|
PDF
|
001107
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n T h e/iP D 42S 16 405L , 4216405L a re 4 ,1 94,304 words by 4 bits CMOS dynam ic RAM with optional hyper page mode
|
OCR Scan
|
16405L
4216405L
uPD42S16405L
uPD4216405L
PD42S16405L
16405L,
4216405L
26-pin
VP15-207-2
001107
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72FY and M C-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5
|
OCR Scan
|
MC-424LFC72
72-BIT
MC-424LFC72FY
C-424LFC72FW
uPD4265165
uPD4216405L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and M C-424LFG641FW are a 4,194,304 words by 64 bits dynam ic RAM modules on which
|
OCR Scan
|
MC-424LFG641
64-BIT
MC-424LFG641F
C-424LFG641FW
uPD4216405L
uPD4265165
|
PDF
|
777T7
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT / ¿P D 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
/iPD4216405
//PD4216405
26-pin
cycles/64
J/PD4216405-50
/xPD42O
0161o
b427525
20too5
777T7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424FG641 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FG641 is a 4,194,304 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM : ,uPD4216405 are assembled.
|
OCR Scan
|
MC-424FG641
64-BIT
MC-424FG641
uPD4216405
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which
|
OCR Scan
|
MC-424LFC721
72-BIT
MC-424LFC721F
C-424LFC721FW
uPD4216405L
uPD4265165
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 16 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /¿PD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
uPD4216405
jxPD4216405
26-pin
cycles/64
//PD4216405-50
673t8
016tS
008tooo2
jjPD42
|
PDF
|
a70 8 pin ic
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode
|
OCR Scan
|
uPD42S16405L
uPD4216405L
jiPD42S16405L,
4216406L
304wocds
/IPD42S16405L
1PD42S16405L,
421S405L
26-pin
a70 8 pin ic
|
PDF
|
PD42S16405
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 4 0 5 , 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4M -W O RD BY 4-BIT, HYPER PAGE MODE EDO D escrip tio n The ¿iPD42S16405,4216405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode
|
OCR Scan
|
uPD42S16405
uPD4216405
PD42S16405
PD42S16405,
26-pin
fiPD42S16405-50,
42S16405-60,
1PD42S16Exposure
b427555
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE Description The /iPD42S16405L, 4216405L are 4,194,304 w ords by 4 bits CMOS dynam ic RAM w ith optional hyper page
|
OCR Scan
|
/iPD42S16405L,
4216405L
jiPD42S16405L
26-pin
iPD42S16405L-A70,
421640mit:
b427S5S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /¿PD42S16405L, 4216405L are 4 194 304 w ords by 4 bits dynam ic C M O S R A M s with optional hyper page
|
OCR Scan
|
16M-BIT
PD42S16405L,
4216405L
26-pin
26-pln
JPD42S16405L-A60,
4216405L-A60
iPD42S160
|
PDF
|
nec A2C
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 4 2 S 16 4 0 5 L, 4 2 16 4 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO D escription The ¿¿PD42S16405L, 4216405L are 4,194,304 words by 4 bits CMOS dynamic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
uPD42S16405L
uPD4216405L
/JPD42S16405L
4216405L
26-pin
/iPD42S16405L-A50,
4216405L-A50
PD42S16405L-A60,
nec A2C
|
PDF
|
marking a70 8 pin ic
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT mPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
|
OCR Scan
|
uPD42S16405L
4216405L
/iPD42S16405L,
4216405L
PD42S16405L,
26-pin
PD42S16405L-A60,
4216405L-A60
marking a70 8 pin ic
|
PDF
|
RASOA11
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿ P D 4216405 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The pPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
uPD4216405
PD4216405
26-pin
cycles/64
//PD4216405-50
JIPD4216405-60
PD4216405
ixPD4216405.
PD4216405G3
RASOA11
|
PDF
|
S8430
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The M C-424LFC72FY and M C-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5
|
OCR Scan
|
MC-424LFC72
72-BIT
C-424LFC72FY
C-424LFC72FW
uPD4265165
/iPD4265165)
PD4216405L)
S8430
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-424000LFC72F 3.3 V OPERATION 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO D escrip tio n The MC-424000LFC72F is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: ;PD4216405L are assembled.
|
OCR Scan
|
MC-424000LFC72F
72-BIT
MC-424000LFC72F
iPD4216405L
M168S-50A3
b427SES
|
PDF
|