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    IRF7521D1

    Abstract: 9164
    Text: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V


    Original     		PDF PD-91646C IRF7521D1 IRF7521D1 9164

    IRGNIN075M12

    Abstract: diode C522 C524 DIODE
    Text: PD9164 IRGNIN075M12 International S Rectifier "CHOPPER HIGH SIDE SWITCH' IGBTINT-A-PAK Low conduction loss IGBT High Side Switch -=3 VCE= 1200V lc = 75A 50-• Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGNIN075M12 50---VCE= C-525 4fl55452 C-526 002031b IRGNIN075M12 diode C522 C524 DIODE

    RD2001

    Abstract: 5M MARKING CODE SCHOTTKY DIODE J332 CL65B
    Text: PD-91649C International I«R Rectifier IRF7526D1 FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low V F Schottky Rectifier • Generation 5 Technology • Micro8™ Footprint V dss = "30V


    OCR Scan     		PDF PD-91649C IRF7526D1 RD2001 5M MARKING CODE SCHOTTKY DIODE J332 CL65B