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    sirio

    Abstract: IGBT 600V 200A time switch speed off MOSFET ior 144 power mosfet 200A mosfet 200A time switch speed off transistor* igbt 200A 300 V Sirio IC diode C209 irgni200f06
    Text: International [^Rectifier PD9976B IRGNI200F06 "CHOPPER“ IGBT INT-A-PAK Fast Speed IGBT High Side Switch I- ° 3 «Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail"


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    IRGNI200F06 10KHz 50KHz C-212 554S2 sirio IGBT 600V 200A time switch speed off MOSFET ior 144 power mosfet 200A mosfet 200A time switch speed off transistor* igbt 200A 300 V Sirio IC diode C209 irgni200f06 PDF