Untitled
Abstract: No abstract text available
Text: PKB3005U Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)18 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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PKB3005U
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D bbSS^l DQ150fl3 b PKB3005U MAINTENANCE TYPE J for new design use PVB32005X MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.
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DQ150fl3
PKB3005U
PVB32005X)
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PKB3005U
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE □ bE D bbS3T31 I MAI NTENANCE TYPE for new design use PVB32005X 0015003 PKB3005Ü r-ss-oî? MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.
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PVB32005X)
bbS3T31
PKB3005Ã
PKB3005U
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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