ADF4156
Abstract: AN-202
Text: PSA1450F-LF Rev A1 Fractional-N Phase-Locked Loop Surface Mount Module Applications Application Notes • Fixed Wireless • Test Equipments • • AN-107: Manual Soldering Technique • AN-202: Programming Z-COMM PLLs Performance Specifications Min Frequency
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PSA1450F-LF
AN-107:
AN-202:
PLL-24S1-H
PLL-24S1
FRM-S-002
ADF4156
AN-202
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Untitled
Abstract: No abstract text available
Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless
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PSA1450F-LF
PLL-24S
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ADF4156
Abstract: AN-202
Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S1 APPLICATIONS
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PSA1450F-LF
PLL-24S1
Switc10
PLL-24S1-H
ADF4156
AN-202
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PDF
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Untitled
Abstract: No abstract text available
Text: PSA1450F-LF Rev A1 Fractional-N Phase-Locked Loop Surface Mount Module Applications Application Notes • Fixed Wireless • Test Equipments • • AN-107: Manual Soldering Technique • AN-202: Programming Z-COMM PLLs Performance Specifications Min Frequency
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Original
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PSA1450F-LF
AN-107:
AN-202:
PLL-24S1-H
PLL-24S1
FRM-S-002
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PDF
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ADF4156
Abstract: AN-200 AN-201 AN-202
Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 8 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless
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Original
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PSA1450F-LF
PLL-24S
ADF4156
AN-200
AN-201
AN-202
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PDF
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Untitled
Abstract: No abstract text available
Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 8 KHz • Package Style: PLL-24 APPLICATIONS • Fixed Wireless
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Original
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PSA1450F-LF
PLL-24
P18-24
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Untitled
Abstract: No abstract text available
Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless
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PSA1450F-LF
PLL-24S
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DDA 003A
Abstract: CON12 M68HC11 MC68HC11C0 MC68HC11C0CFN2 MC68HC11C0CFU2 MC68HC11C0CFU3 MC68HC11C0FU3 MC68HC11C0MFU2 MC68HC11C0VFN2
Text: MOTOROLA Order this document by MC68HC11C0TS/D SEMICONDUCTOR TECHNICAL DATA MC68HC11C0 Technical Summary 8-Bit Microcontroller 1 Introduction The MC68HC11C0 high-performance microcontroller unit MCU is an enhanced member of the M68HC11 family of microcontrollers. Excluding its new features, the MC68HC11C0 is very similar to
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MC68HC11C0TS/D
MC68HC11C0
MC68HC11C0
M68HC11
MC68HC11E9
64Kbyte
MPC505TS/D
DDA 003A
CON12
MC68HC11C0CFN2
MC68HC11C0CFU2
MC68HC11C0CFU3
MC68HC11C0FU3
MC68HC11C0MFU2
MC68HC11C0VFN2
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b20100
Abstract: MPSA12
Text: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol
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MPSA12
PSA14
b20100
MPSA12
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2N6427
Abstract: MMBT6427 MPSA14
Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted
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2N6427
MMBT6427
MPSA14
MMBT6427
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Untitled
Abstract: No abstract text available
Text: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS
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2N6427
MMBT6427
2N6427
OT-23
PSA14
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2N5306
Abstract: MPSA14
Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5306 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS
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2N5306
MPSA14
2N5306
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2N6427
Abstract: MMBT6427 MPSA14
Text: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys
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2N6427
MMBT6427
OT-23
MPSA14
2N6427
MMBT6427
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mpsa14
Abstract: transistor k 2628 Technical transistor k 2628 MPS-A14 Small-Signal Transistors, FETs and Diodes Device transistor D 2624
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA13 M PSA14* NPN Silicon COLLECTOR 3 'M o to ro la Preferred Device BA SE \ fy EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit Vdc Vdc Collector-Emitter Voltage VCES 30 Collector-Base Voltage
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MPSA13
PSA14*
MPSA14
mpsa14
transistor k 2628 Technical
transistor k 2628
MPS-A14
Small-Signal Transistors, FETs and Diodes Device
transistor D 2624
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2N5308
Abstract: No abstract text available
Text: SEMICONDUCTOR ¡m 2N5308 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted
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2N5308
PSA14
2N5308
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR ¡m 2N5307 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted
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2N5307
PSA14
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted
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2N6426
PSA14
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MPSa13 equivalent
Abstract: mpsa13
Text: TO SHIBA MPSA13,14 Darlington Transistor Silicon NPN Epitaxial Type For Printer Drive, Core Drive, and LED Drive Applications Features • High DC Current Gain @ lc = 100mA - M PSA13hFE= 10,000 Min. - M PSA14hFE = 20,000 Min. Absolute Maximum Ratings Ta = 25 C
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MPSA13
100mA
PSA13hFE=
PSA14hFE
25TMC
PS-A13)
MPS-A14)
100mA
MPS-A13)
MPSa13 equivalent
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2N5307
Abstract: MPSA14
Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5307 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS
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2N5307
MPSA14
2N5307
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PDF
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2N6426
Abstract: MPSA14
Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted
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2N6426
MPSA14
2N6426
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2N530
Abstract: 2N5308 MPSA14 to-92 NPN Darlington
Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N530Ô NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS
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2N530Ã
MPSA14
2N530
2N5308
to-92 NPN Darlington
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MPSA12
Abstract: MPSA14 to-92 NPN Darlington
Text: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted
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OCR Scan
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MPSA12
MPSA14
MPSA12
to-92 NPN Darlington
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transistor E 13009
Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4I26
2N4400
2N4401
transistor E 13009
transistor d 13009
E 13009
13007 m
13007 2 transistor
13009 PNP Transistor
jE 13007
transistor E 13007
p 13009
transistor j 13009
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c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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