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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N03VLG R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)


    Original     		NP90N03VLG R07DS0129EJ0100 NP90N03VLG AEC-Q101 NP90N03VLG-E1-AYâ NP90N03VLG-E2-AYâ O-252, PDF

    NP90N03VLG

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N03VLG R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)


    Original     		NP90N03VLG R07DS0129EJ0100 NP90N03VLG AEC-Q101 NP90N03VLG-E1-AY1 NP90N03VLG-E2-AY1 O-252, PDF