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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 Previous: REJ03G1497-0100 Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A) • Low drive current • High speed switching


    Original     		RQK0606KGDQA R07DS0310EJ0200 REJ03G1497-0100) PLSP0003ZB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 Previous: REJ03G1497-0100 Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A) • Low drive current • High speed switching


    Original     		RQK0606KGDQA R07DS0310EJ0200 REJ03G1497-0100) PLSP0003ZB-A PDF