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h5n2507p Abstract: No abstract text available Text: Preliminary Datasheet H5N2507P R07DS0877EJ0200 Previous: RJJ03G0646-0100 Rev.2.00 Sep 12, 2012 250V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current	Original	H5N2507P R07DS0877EJ0200 RJJ03G0646-0100) PRSS0004ZE-A h5n2507p	PDF

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h5n2507p

Abstract: No abstract text available
Text: Preliminary Datasheet H5N2507P R07DS0877EJ0200 Previous: RJJ03G0646-0100 Rev.2.00 Sep 12, 2012 250V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current

Original

H5N2507P R07DS0877EJ0200 RJJ03G0646-0100) PRSS0004ZE-A h5n2507p

PDF