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    Text: Data Sheet HAT2217C R07DS1183EJ0400 Previous: REJ03G0449-0300 Rev.4.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 4.5 V gate drive devices.


    Original     		HAT2217C R07DS1183EJ0400 REJ03G0449-0300) PWSF0006JA-A VD2886-9022/9044 PDF