Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RA08N1317 Search Results

    SF Impression Pixel

    RA08N1317 Price and Stock

    Mitsubishi Electric RA08N1317M-502

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RA08N1317M-502 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    GLYN GmbH & Co. KG RA08N1317M-502 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Mitsubishi Electric RA08N1317M-101

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RA08N1317M-101 459
    • 1 $27.1844
    • 10 $27.1844
    • 100 $21.7475
    • 1000 $21.0679
    • 10000 $21.0679
    		Buy Now

    RA08N1317 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RA08N1317M Mitsubishi Original PDF
    RA08N1317M Mitsubishi RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO Original PDF
    RA08N1317M Mitsubishi Silicon MOS FET Power Amplifier, 135-175 MHz 8 W PORTABLE RADIO Scan PDF
    RA08N1317M-01 Mitsubishi Original PDF
    RA08N1317M-01 Mitsubishi 135 - 175 MHz 8 W 9.6 V, 2 Stage Amp. for Portable Radio Original PDF
    RA08N1317M-101 Mitsubishi RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO Original PDF
    RA08N1317M-E01 Mitsubishi Original PDF

    RA08N1317 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RA08N1317M

    Abstract: RA08N1317M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz


    Original     		RA08N1317M 135-175MHz RA08N1317M 175-MHz RA08N1317M-01 PDF

    RA08N1317M

    Abstract: RA08N1317M-101 RA08N1317
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz


    Original     		RA08N1317M 135-175MHz RA08N1317M 175-MHz RA08N1317M-101 RA08N1317 PDF

    g35V

    Abstract: "MOSFET Module" hatfield attenuator F-135 mitsubishi power module mitsubishi rf power module RF MOSFET MODULE RA08N1317M RA08N1317M-01 RA08N1317M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz


    Original     		RA08N1317M 135-175MHz RA08N1317M 175-MHz g35V "MOSFET Module" hatfield attenuator F-135 mitsubishi power module mitsubishi rf power module RF MOSFET MODULE RA08N1317M-01 RA08N1317M-E01 PDF

    RF MOSFET MODULE

    Abstract: RA08N1317M RA08N1317M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz


    Original     		RA08N1317M 135-175MHz RA08N1317M 175-MHz RF MOSFET MODULE RA08N1317M-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456768 1234567689 34567689A RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module


    Original     		234567689A 135-175MHz RA08N1317M 175-MHz RA08N1317M PDF

    RA08N1317M

    Abstract: RA08N1317M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317 RA08N1317M 08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module


    Original     		RA08N1317M 08N1317 135-175MHz RA08N1317M 175-MHz RA08N1317M-101 PDF

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 PDF

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A PDF

    flammable

    Abstract: RA08N1317M
    Text: ATTENTION MITSUBISHI RF POW ER M ODULE O BSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE RA08N1317M DEVICES Silicon MOS FET Power Amplifier, 135-175MHz 8W PORTABLE RADIO MAXIMUM RATINGS SYM BO L V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C U N LESS OTH ERW ISE NOTED)


    OCR Scan     		RA08N1317M 135-175MHz 25deg 50ohm 50ohim f-135-175MHz 35-175MHz flammable RA08N1317M PDF