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Mitsubishi Electric RD60HUF1 Electronic Component
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RD60HUF1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RD60HUF1		Mitsubishi	RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W		Original	PDF
RD60HUF1		Mitsubishi	Silicon MOSFET Power Transistor 520 MHz, 60 W		Original	PDF
RD60HUF1		Mitsubishi	MITSUBISHI RF POWER MOS FET		Original	PDF

RD60HUF1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RD60HUF1-101 Abstract: RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT Text: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3	Original	RD60HUF1 520MHz RD60HUF1 RD60HUF1-101 Oct2011 RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT	PDF
transistor b 1624 Abstract: b 1624 transistor transistor A 1568 MITSUBISHI RF POWER MOS FET Pch MOS FET 100OHM RD60HUF1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:	Original	RD60HUF1 520MHz 520MHz RD60HUF1 transistor b 1624 b 1624 transistor transistor A 1568 MITSUBISHI RF POWER MOS FET Pch MOS FET 100OHM	PDF
RD60HUF1 Abstract: 100OHM ZO-10 Rf power transistor mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.	Original	RD60HUF1 520MHz RD60HUF1 520MHz 100OHM ZO-10 Rf power transistor mosfet	PDF
100OHM Abstract: RD60HUF1 RD60HUF1-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.	Original	RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 100OHM RD60HUF1-101	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3	Original	RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101	PDF
RD60HUF1-101 Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.	Original	RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF1-101 Rf power transistor mosfet UHF transistor FET 100OHM PINw10 transistor A 1568 mitsubishi 250	PDF
RD60HUF Abstract: mitsubishi rf 100OHM RD60HUF1 RD60HUF1-101 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.	Original	RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF mitsubishi rf 100OHM RD60HUF1-101	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1	PDF
RM15TB-H Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;	Original	CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A	PDF
Untitled Abstract: No abstract text available Text: ATTENTION O B SE R V E PR EC A U T IO N S FOR HANDLING e l e t r o s t a t ic TENTATIVE MITSUBISHI RF POWER MOS FET RD60HUF1 SENSITIVE D E V IC E S OUTLINE DESCRIPTION DRAWING RDéOHUFï is a MO^J FJ3T type transistor specifically designed for UHF High power amplifiers applications-	OCR Scan	RD60HUF1 520MHz 25deg Tc-25deg 520MHz RD60HUF	PDF
lv 5682 Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837 Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically	OCR Scan	RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837	PDF