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    RJK0223DNS-00#J5 Renesas Electronics Corporation P Channel Power MOSFET Visit Renesas Electronics Corporation

    RJK0223DNS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0223DNS-00#J5 Renesas Electronics FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 25V 16A HWSON Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0126EJ0110 High Speed Power Switching Rev1.10 May 16, 2012 Application DC-DC conversion for PC and Server. Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		RJK0223DNS R07DS0126EJ0110 PWSN0008JD-A HWSON3046-8) PDF

    MOS2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030 Previous: REJ03G1952-0020 Rev.0.30 Sep 02, 2010 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		RJK0223DNS R07DS0126EJ0030 REJ03G1952-0020) PWSN0008JD-A HWSON3046-8 curre9044 MOS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0126EJ0110 High Speed Power Switching Rev1.10 May 16, 2012 Application DC-DC conversion for PC and Server. Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		RJK0223DNS R07DS0126EJ0110 PWSN0008JD-A HWSON3046-8) PDF