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    RN2313 Search Results

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    Toshiba America Electronic Components RN2313,LF

    TRANS PREBIAS PNP 50V 0.1A SC70
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    DigiKey RN2313,LF Cut Tape 3,000 1
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    Mouser Electronics RN2313,LF
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    TTI RN2313,LF Reel 3,000
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    Toshiba America Electronic Components RN2313(TE85L,F)

    TRANS PREBIAS PNP 50V 0.1A SC70
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    DigiKey RN2313(TE85L,F) Digi-Reel 1
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    Avnet Americas RN2313(TE85L,F) Reel 3,000
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    Verical RN2313(TE85L,F) 2,650 1,429
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    Quest Components RN2313(TE85L,F) 2,120
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    Toshiba America Electronic Components RN2313LF

    Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 - Tape and Reel (Alt: RN2313,LF)
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    Avnet Americas RN2313LF Reel 24 Weeks 3,000
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    Toshiba America Electronic Components RN2313,LF(T

    Digital Trans, Pnp, 50V, 0.1A, Sot-323 Rohs Compliant: Yes |Toshiba RN2313,LF(T
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    Newark RN2313,LF(T Cut Tape 5
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    RN2313,LF(T Reel 3,000
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    DigitHead Inc 440R-N23131

    Allen Bradley 440Rn23131 Relay |Digithead 440R-N23131
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    Newark 440R-N23131 Bulk 1
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    RN2313 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2313 Toshiba PNP transistor Original PDF
    RN2313(TE85L,F) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 100MW USM Original PDF

    RN2313 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RN1312

    Abstract: RN1313 RN2312 RN2313
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    RN2312 RN2313 RN1312, RN1313 961001EAA2' RN1312 RN1313 RN2313 PDF

    toshiba Transistor Silicon pct

    Abstract: RN1312 RN1313 RN2312 RN2313
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original
    RN2312 RN2313 RN1312, RN1313 SC-70 toshiba Transistor Silicon pct RN1312 RN1313 RN2313 PDF

    RN1312

    Abstract: RN1313 RN2312 RN2313
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    RN2312 RN2313 RN1312, RN1313 RN1312 RN1313 RN2313 PDF

    RN1312

    Abstract: RN1313 RN2312 RN2313
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    RN2312 RN2313 RN1312, RN1313 SC-70 RN1312 RN1313 RN2313 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    RN2312 RN2313 RN1312, RN1313 SC-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original
    RN2312 RN2313 RN1312, RN1313 SC-70 RN2312 PDF

    RN1312

    Abstract: RN1313 RN2312 RN2313
    Text: RN2312,RN2313 シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN2312,RN2313 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original
    RN2312 RN2313 RN1312, RN1313 RN23VCE RN2312 RN1312 RN1313 RN2313 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    RN2312 RN2313 RN1312, RN1313 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2312, RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design


    Original
    RN2312 RN2313 RN2312, RN1312, RN1313 PDF

    RN1312

    Abstract: RN1313 RN2312 RN2313
    Text: RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    RN1312 RN1313 RN2312, RN2313 SC-70 961001EAA2' RN1313 RN2312 RN2313 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original
    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original
    RN1312 RN1313 RN2312, RN2313 RN1312 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original
    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original
    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


    Original
    050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV PDF

    RN1312

    Abstract: RN1313 RN2312 RN2313
    Text: RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    RN1312 RN1313 RN2312, RN2313 RN1313 RN2312 RN2313 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1312,1313 RN1312 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN2312, RN2313


    OCR Scan
    RN1312 RN1312) RN2312, RN2313 SC-70 RN1313 RN1313 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2312,RN2313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN7317 Mr • g mRN7313 « ■w v ■v r u m u 'm Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 With Built-in Bias Resistors


    OCR Scan
    RN2312 RN2313 RN7317 RN7313 RN1312, RN1313 RN2312 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A RN2312,RN2313 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2312, RN2313 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ±0.1 • With Built-in Bias Resistors • Simplify Circuit Design


    OCR Scan
    RN2312 RN2313 RN2312, RN1312, RN1313 RN2312 PDF

    RN2226

    Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
    Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package


    OCR Scan
    2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015 PDF

    RN1417

    Abstract: rn4601
    Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404


    OCR Scan
    RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601 PDF

    ic T M 2313

    Abstract: T M 2313 SC 2313
    Text: RN2312,2313 RN2312 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1312, RN1313


    OCR Scan
    RN2312 RN2312) RN1312, RN1313 SC-70 RN2313 RN2313 ic T M 2313 T M 2313 SC 2313 PDF