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    Toshiba America Electronic Components RN2608(TE85L,F)

    TRANS 2PNP PREBIAS 0.3W SM6
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    Mouser Electronics RN2608(TE85L,F)
    • 1 $0.32
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    RN2608 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2608 Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Original PDF
    RN2608 Toshiba PNP transistor Original PDF
    RN2608 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    RN2608(TE85L,F) Toshiba Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL PNP SM6 -50V -100A Original PDF

    RN2608 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN1607

    Abstract: RN1609 RN2607 RN2608 RN2609
    Text: RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors


    Original     		PDF RN2607 RN2609 RN2608 RN1607 RN1609 RN2607 RN2608 RN1609 RN2609

    RN1607

    Abstract: RN1609 RN2607 RN2608 RN2609
    Text: RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2607,RN2608,RN2609 Unit in mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SM6 (super mini type with 6 leads) z With built-in bias resistors


    Original     		PDF RN2607 RN2609 RN2608 RN1607 RN1609 RN2607 RN2608 RN1609 RN2609

    Untitled

    Abstract: No abstract text available
    Text: RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2607, RN2608, RN2609 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SM6 (super mini type with 6 leads)


    Original     		PDF RN2607 RN2609 RN2607, RN2608, RN1607 RN1609 RN2607 RN2608

    Untitled

    Abstract: No abstract text available
    Text: RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z Including two devices in SM6 (super mini type with 6 leads) z With built-in bias resistors


    Original     		PDF RN2607 RN2609 RN2608 RN1607 RN1609 RN2609

    RN2609

    Abstract: No abstract text available
    Text: RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors


    Original     		PDF RN2607 RN2609 RN2608 RN1607 RN1609 RN2607 RN2608 RN2609

    Untitled

    Abstract: No abstract text available
    Text: RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors


    Original     		PDF RN2607 RN2609 RN2608 RN1607 RN1609 RN2607 RN2608

    Untitled

    Abstract: No abstract text available
    Text: RN2607～RN2609 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵型) RN2607, RN2608, RN2609 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN2607ï RN2609 RN2607, RN2608, RN1607ï RN1609

    Untitled

    Abstract: No abstract text available
    Text: RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2607,RN2608,RN2609 Unit in mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors


    Original     		PDF RN2607 RN2609 RN2608 RN1607 RN1609 RN2607 RN2608

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Marking HEB

    Abstract: RN2607 RN2608 RN2609
    Text: TOSHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1.6-0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN2607-RN2609 RN2607, RN2608, RN2609 RN1607-RN1609 RN2607 RN2608 RN2609 RN2608 Marking HEB

    2607 transistor

    Abstract: 26-07 transistor 2609 N2609
    Text: TOSHIBA R N 2607-R N 2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF 2607-R RN2607, RN2608, RN2609 RN1607--RN1609 RN2607 RN2608 2607 transistor 26-07 transistor 2609 N2609

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN2607-RN2609 RN2607, RN2608, RN2609 RN1607 RN1609 RN2607 RN2608 2607-R

    IC-414

    Abstract: k 2608
    Text: RN2607,2608,2609 RN2607 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D U nit in mm DRIVER + 0.2 2.8 -0 .3 CIRCUIT APPLICATIONS. + 0.2 1.6-01 EE- Including Two Devices in SM6 (Super Mini Type with 6 leads) -EE W ith Built-in Bias Resistors E3-+Ì 2


    OCR Scan     		PDF RN2607 RN2607) RN1607 RN1609 RN2608 RN2609 809ZNH 809ZMH IC-414 k 2608

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Marking XA XB XC XD XE XF XH XI XJ XK XM

    Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
    Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107


    OCR Scan     		PDF RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE RN2607RN2609 SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E C IRC U IT A N D Unit in mm D RIV ER C IRC U IT APPLICA TIO N S. Including Two Devices in SM6 Super Mini Type with 6 leads With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN2607RN2609 RN1607 RN1609 RN2607 RN2608 RN2609 2607RN2609 RN2607-RN2609 RN2607 RN2608

    RN1417

    Abstract: rn4601
    Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404


    OCR Scan     		PDF RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601

    rr1206

    Abstract: EN1602 RN10U RN1509 RN1510 RN1511 RN1601 RN1603 RN1604 RN1605
    Text: - 328 - mfctìS m % tt RN1509 Pc* VcBO V m h (Ta=25‘ C,*EPIÍTc=25‘ C) , £ (V) (A) (W) (min) (max) SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 30 SW/INV/D 50 50 0.1 0.3 0.1 50 SW/INV/D 50


    OCR Scan     		PDF RN1509 RN1510 RN1511 RN1601 EN1602 RN1603 RN1604 RN1201 RN2201 10K/10K rr1206 RN10U RN1605