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    Toshiba America Electronic Components

    Toshiba America Electronic Components RN4607(TE85L,F)

    Digital Transistors SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RN4607(TE85L,F) 2,990
    • 1 $0.32
    • 10 $0.202
    • 100 $0.093
    • 1000 $0.083
    • 10000 $0.053
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    RN4607 Datasheets (10)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    RN4607 Toshiba PNP/NPN Epitaxial Type Transistor Original PDF
    RN4607 Toshiba NPN and PNP transistor Original PDF
    RN4607 Toshiba Japanese - Transistors Original PDF
    RN4607 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    RN4607(TE85L) Toshiba RN4607 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal Original PDF
    RN4607TE85L Toshiba RN4607 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    RN4607(TE85L,F) Toshiba Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL PNP/NPN SM6 -50V -100A Original PDF
    RN4607TE85N Toshiba RN4607 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    RN4607(TE85R) Toshiba RN4607 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal Original PDF
    RN4607TE85R Toshiba RN4607 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    RN4607 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE RN4607 Unit in mm SW ITC H IN G, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 2.8 - 0.3 A N D DRIVER CIRCUIT APPLICATIONS. • • • • Including Two Devices in SM6 Super Mini Type with 6 leads


    OCR Scan     		RN4607 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4607 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi n 7 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 -0 .3 1.6 • Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		RN4607 J-J1V11J. PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) RN4607 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Includeing two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 PDF

    RN4607

    Abstract: No abstract text available
    Text: RN4607 東芝トランジスタ シリコンPNP・NPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN4607 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。


    Original     		RN4607 RN4607 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Including two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 PDF

    RN4607

    Abstract: No abstract text available
    Text: TOSHIBA RN4607 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4607 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 -0 .3 + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		RN4607 RN4607 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) RN4607 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z Including two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4607 RN4607 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm A N D DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0 .3 + 0.2 1.6-0.1 • Including Two Devices in SM6 (Super Mini Type with 6 leads) • With Built-in Bias Resistors • Simplify Circuit Design


    OCR Scan     		RN4607 RN4607) PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN4607 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4607 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 - 0 . 3 + 0.2 1. 6 - 0.1 •


    OCR Scan     		RN4607 PDF

    RN4607

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) RN4607 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z Including two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 RN4607 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm Including two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 PDF

    RN4607

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z Including two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 RN4607 PDF

    RN4607

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) RN4607 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 RN4607 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4607 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) RN4607 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Includeing two devices in SM6 (super mini type with 6 leads)


    Original     		RN4607 PDF

    Marking XA XB XC XD XE XF XH XI XJ XK XM

    Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
    Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107


    OCR Scan     		RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    asus

    Abstract: FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e
    Text: 5 4 3 2 1 */E*/I &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. DDR2-800MHz PAGE 29 Dual Channel DDR2 D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;


    Original     		DDR2-800MHz 4800mAH 2400mAH 4800mAH; 7200mAH 7200mAH; 638pin TL-50/52/56/60) asus FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV PDF

    RN2226

    Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
    Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package


    OCR Scan     		2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015 PDF