BUZ80
Abstract: No abstract text available
Text: BUZ 80 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80 A 800 V 3.6 A 3Ω TO-220 AB C67078-S1309-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1309-A3
BUZ80
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PDF
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S1309
Abstract: S1300
Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data ACTUAL SIZE 3.3V, HCMOS S1300 / S1309 Series Frequency Range: 1.5 MHz to 28.6363 MHz Frequency Stability: ±20, ±25 or ±50ppm over all conditions: operating temperature, voltage change, load change, calibration
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Original
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S1300
S1309
50ppm
10ppm
DS-126
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PDF
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ST1300 equivalent transistor
Abstract: SMD circuits MARKING CODE AA smd diode code B2 S1309 smd marking DD ST1300 DIL14 S1300 SMD 4608 SMD DIL OSCILLATOR
Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data ACTUAL SIZE 3.3V, LVCMOS S1300 / S1309 / ST1300 / ST1309 Series Frequency Range: 1.5 MHz to 28.6363 MHz Frequency Stability: ±20, ±25 or ±50ppm over all conditions: operating temperature, voltage change, load change, calibration
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Original
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S1300
S1309
ST1300
ST1309
50ppm
10ppm
DS-126
ST1300 equivalent transistor
SMD circuits MARKING CODE AA
smd diode code B2
smd marking DD
DIL14
SMD 4608
SMD DIL OSCILLATOR
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PDF
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BUZ 840
Abstract: C67078-S1309-A2 50b11
Text: BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80 800 V 3.1 A 4Ω TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current
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Original
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O-220
C67078-S1309-A2
BUZ 840
C67078-S1309-A2
50b11
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PDF
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ST1309
Abstract: S1309 ST1300 SMD circuits MARKING CODE AA smd diode code B2 smd marking DD ST1300 equivalent ST1300 equivalent transistor DIL14 S1300
Text: SaRonix Voltage Controlled Crystal Oscillator Technical Data ACTUAL SIZE 3.3V, LVCMOS S1300 / S1309 / ST1300 / ST1309 Series Frequency Range: 1.5 MHz to 28.6363 MHz Frequency Stability: ±20, ±25 or ±50ppm over all conditions: operating temperature, voltage change, load change, calibration
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Original
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S1300
S1309
ST1300
ST1309
50ppm
10ppm
DS-126
SMD circuits MARKING CODE AA
smd diode code B2
smd marking DD
ST1300 equivalent
ST1300 equivalent transistor
DIL14
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PDF
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BUZ80
Abstract: BUZ 840 C67078-S1309-A2
Text: BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80 800 V 3.1 A 4Ω TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current
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Original
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O-220
C67078-S1309-A2
BUZ80
BUZ 840
C67078-S1309-A2
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PDF
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200743D
Abstract: S1308 S1307 BAW 43 S1309 MSL3 20-pin SKY73023-21
Text: PRELIMINARY DATA SHEET SKY65238: Power Amplifier Module With Integrated BAW Filter for WLAN Applications Applications Description • IEEE802.11 b/g/n WLAN − Access points and routers − Set top boxes, gaming consoles, and other home entertainment devices including video, voice, and data
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Original
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SKY65238:
IEEE802
SKY65238
200743D
200743D
S1308
S1307
BAW 43
S1309
MSL3 20-pin
SKY73023-21
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration
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Original
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SiHD6N62E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP21N65EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET using E Series Technology • Reduced Trr, Qrr, and Irrm • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)
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Original
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SiHP21N65EF
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiP32408, SiP32409 Vishay Siliconix 1.1 V to 5.5 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32408 and SiP32409 are slew rate controlled load switches designed for 1.1 V to 5.5 V operation. These devices guarantee low switch on-resistance at 1.2 V
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Original
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SiP32408
SiP32409
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR466DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR466DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS424DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiS424DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR800DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR800DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR472DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR472DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses
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Original
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SiHG73N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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ULTRAVIOLET LED
Abstract: uvex dust sensor
Text: PRELIMINARY UPVLED ULTRA-VIOLET LED P RODUCT P REVIEW KEY FEATURES Parameters Symbol Value Unit DC Forward Drive Current IF 30 mA Peak Forward Current IFP 100 mA LED Operating Junction Temperature Tj -40 to +150 °C Reverse Voltage VR 8 V Power Dissipation
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR890DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR890DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR492DP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR492DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiRA04DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR892DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR892DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR496DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR496DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode •Avalanche-rated Type BUZ 80 Vus 800 V b 3.1 A %S on 40 Package Ordering Code TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current Values >D Tc = 28 °C
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OCR Scan
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O-220
C67078-S1309-A2
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 80 8 Ò0 V b ^DS on Package Ordering Code 3.1 A 4n TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b Tc = 28 °C
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OCR Scan
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O-220
C67078-S1309-A2
23SbOS
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PDF
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burr brown OPA132
Abstract: OPA2132
Text: 0PA132 OPA2132 0PA4132 B U R R -B R O W N 1 E High Speed FET-INPUT OPERATIONAL AMPLIFIERS FEATURES OPA132 • FET INPUT: lB = 50pA max • WIDE BANDWIDTH: 8MHz • HIGH SLEW RATE: 20V/^is • LOW NOISE: 8nV/VHz 1kHz • LOW DISTORTION: 0.00008% • HIGH OPEN-LOOP GAIN: 130dB (600il load)
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OCR Scan
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OPA132
OPA2132
OPA4132
130dB
600il
OPA132
OPA132,
burr brown OPA132
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PDF
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