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    S8064 Price and Stock

    RUNIC RS806-4.00YF5

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    DigiKey RS806-4.00YF5 Reel 6,000 3,000
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    RS806-4.00YF5 Digi-Reel 6,000 1
    • 1 $0.78
    • 10 $0.484
    • 100 $0.3131
    • 1000 $0.21812
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    RS806-4.00YF5 Cut Tape 6,000 1
    • 1 $0.78
    • 10 $0.484
    • 100 $0.3131
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    RUNIC RS806-4.65YF5

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    DigiKey RS806-4.65YF5 Cut Tape 6,000 1
    • 1 $0.78
    • 10 $0.484
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    RS806-4.65YF5 Digi-Reel 6,000 1
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    RS806-4.65YF5 Reel 6,000 3,000
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    Panasonic Electronic Components AXK6S80647YG

    CONN HDR 80POS SMD GOLD
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    DigiKey AXK6S80647YG Digi-Reel 1,339 1
    • 1 $2.79
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    AXK6S80647YG Cut Tape 1,339 1
    • 1 $2.79
    • 10 $2.272
    • 100 $1.8516
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    AXK6S80647YG Reel 1,000 1,000
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    Avnet Americas AXK6S80647YG 14 Weeks 1,000
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    Mouser Electronics AXK6S80647YG 217
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    Newark AXK6S80647YG Cut Tape 841 1
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    AXK6S80647YG Reel 1,000
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    RS AXK6S80647YG Bulk 12 Weeks 1,000
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    Avnet Abacus AXK6S80647YG Reel 15 Weeks 1,000
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    Master Electronics AXK6S80647YG
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    Ozdisan Elektronik AXK6S80647YG
    • 1 $3.36281
    • 10 $3.36281
    • 100 $3.36281
    • 1000 $3.0571
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    TE Connectivity S8064B

    OMNI POLMNT 23IN NF
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    DigiKey S8064B Bulk 4
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    • 100 $105.4125
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    Sager S8064B
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    TE Connectivity 202F232-51-164-0-CS8064

    HEATSHRINK BOOT SZ32 BLACK
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    DigiKey 202F232-51-164-0-CS8064 Bulk 125
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    S8064 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S8064 Hamamatsu Original PDF
    S8064 Hamamatsu Photonics Photo IC designed for near/far distance detection Original PDF
    S8064B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 23IN NF Original PDF

    S8064 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1/12 2-zone LightLight-Modulation PhotoIC for object detection Technical notes S8030,S8064,S8064-10 Preliminary SSD 2000. 7. 5 1. Range finding of an object independent of the reflectance or the color The 2-zone Light-Modulation PhotoIC was developed as a range-finding sensor. Conventional


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    PDF S8030 S8064 S8064-10 443us 224us. 203us 224us 443us

    dual photodiode

    Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
    Text: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


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    PDF S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 dual photodiode photodiode "far infrared" KPIC1028E01

    photodiode "far infrared"

    Abstract: dual photodiode S8030 KPIC1028E01 S8064 SE-171 S-8030
    Text: PHOTO IC Photo IC for rangefinder S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


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    PDF S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 photodiode "far infrared" dual photodiode KPIC1028E01 S-8030

    Si2315BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


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    PDF Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


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    PDF Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11

    SC-89

    Abstract: Si1026X
    Text: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)


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    PDF Si1026X SC-89 08-Apr-05 SC-89

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


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    PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11

    SI2306BDS-T1-E3

    Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


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    PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 18-Jul-08 SI2306

    Si1056X

    Abstract: SC-89
    Text: Si1056X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


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    PDF Si1056X SC-89 Si1056X-T1-E3 Si1056X-T1-GE3 18-Jul-08 SC-89

    SI1050X-T1

    Abstract: SC-89 Si1050X Si1050
    Text: Si1050X Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 Qg (Typ.) 1.23 0.120 at VGS = 1.5 V 0.7 RoHS COMPLIANT 7.1 0.102 at VGS = 1.8 V • Halogen-free Option Available


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    PDF Si1050X SC-89 Si1050X-T1-E3 Si1050X-T1-GE3 18-Jul-08 SI1050X-T1 SC-89 Si1050

    SC-89

    Abstract: Si1023X Si1023X-T1-E3
    Text: Si1023X Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 • TrenchFET Power MOSFET: 1.8 V Rated 1.6 at VGS = - 2.5 V - 300 • Very Small Footprint


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    PDF Si1023X OT-563 SC-89 08-Apr-05 SC-89 Si1023X-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si1035X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V


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    PDF Si1035X 20ded 08-Apr-05

    sC89-6

    Abstract: No abstract text available
    Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V RDS(on) (Ω) ID (A) 0.625 at VIN = 4.5 V ± 0.43 1.8 to 8 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 Halogen-free Option Available TrenchFET Power MOSFET


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    PDF Si1040X SC89-6 08-Apr-05

    si2316ds-t1-e3

    Abstract: No abstract text available
    Text: Si2316DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.050 at VGS = 10 V 3.4 0.085 at VGS = 4.5 V 2.6 • Halogen-free Option Available • TrenchFET Power MOSFET Pb-free Available RoHS* APPLICATIONS


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    PDF Si2316DS O-236 OT-23) Si2316DS-T1 Si2316DS-T1-E3 Si2316DS-T1-GE3 11-Mar-11

    S8060

    Abstract: S8064B
    Text: Omnidirectional Antennas for Data Communications 12 ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ ¥¥¥¥ 800/900 MHz. Omnidirectional Antennas F Y I Antenna Selection Criteria Before you can make an informed antenna selection, you must know


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    PDF anten00) S8244B S8243B S8240B S8064B S8063B S8060B S8060

    Untitled

    Abstract: No abstract text available
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


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    PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET


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    PDF Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET


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    PDF Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


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    PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2303BDS

    Abstract: Si2303BDS-T1 Si2303BDS-T1-E3
    Text: Si2303BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


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    PDF Si2303BDS O-236 OT-23) Si2303BDS-T1 Si2303BDS-T1-E3 Si2303BDS-T1-GE3 08-Apr-05

    74285

    Abstract: SI1073X
    Text: New Product Si1073X Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


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    PDF Si1073X SC-89 Si1073X-T1-E3 Si1073X-T1-GE3 18-Jul-08 74285

    Untitled

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


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    PDF Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 11-Mar-11

    SI1024X-T1-GE3

    Abstract: Si1024X-T1-E3 SC-89 Si1024X S8064
    Text: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free Option Available RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 • TrenchFET Power MOSFET: 1.8 V Rated 0.85 at VGS = 2.5 V 500 • Very Small Footprint


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    PDF Si1024X OT-563 SC-89 08-Apr-05 SI1024X-T1-GE3 Si1024X-T1-E3 SC-89 S8064

    SC-89

    Abstract: Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


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    PDF Si1029X SC-89 08-Apr-05 SC-89